Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (100) substrates

2004 ◽  
Vol 20 (3-4) ◽  
pp. 255-259 ◽  
Author(s):  
Shuichi Ishida ◽  
Keiki Takeda ◽  
Atsushi Okamoto ◽  
Ichiro Shibasaki
Keyword(s):  
Thin Films ◽  
Negative Magnetoresistance ◽  
Positive Magnetoresistance ◽  
Insb Thin Films

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

Synthesis of stoichiometric InSb thin films by a simple molecular‐beam technique

1978 ◽  
Vol 49 (6) ◽  
pp. 3632-3633 ◽  
Author(s):  
S. Baba ◽  
H. Horita ◽  
A. Kinbara
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Insb Thin Films ◽  
Beam Technique

Impurity incorporation into InSb thin films

1984 ◽  
Vol 116 (1-3) ◽  
pp. 200 ◽  
Author(s):  
J. Goc ◽  
M. Oszwałdowski
Keyword(s):  
Thin Films ◽  
Impurity Incorporation ◽  
Insb Thin Films

Thermoelectric and Electrical Properties of Si-doped InSb Thin Films

2019 ◽  
Vol 16 (24) ◽  
pp. 7-12 ◽  
Author(s):  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Insb Thin Films ◽  
Si Doped

Exploration of the inherent magnetoresistance in InSb thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 1543-1546 ◽  
Author(s):  
Tong Zhang ◽  
J J Harris ◽  
W R Branford ◽  
S K Clowes ◽  
L F Cohen ◽  
...  
Keyword(s):  
Thin Films ◽  
Insb Thin Films

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

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