Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method

2013 ◽  
Vol 76 (7) ◽  
pp. 751-755 ◽  
Author(s):  
Subramanian Balamurali ◽  
Rathinam Chandramohan ◽  
Marimuthu Karunakaran ◽  
Thayan Mahalingam ◽  
Padmanaban Parameswaran ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Reaction Method ◽  
Adsorption Reaction ◽  
Morphological Variations ◽  
Doped Zno ◽  
Mn Doped ◽  
Ionic Layer

scholarly journals Synthesis and Characterization of Sodium Bis(2-ethylhexyl) Sulfonsuccinate (AOT) Capped Pure and Mn-Doped CdS Nanoparticles

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
D. Venkatesan ◽  
D. Deepan ◽  
J. Ramkumar ◽  
S. Moorthy Babu ◽  
R. Dhanasekaran
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Transition Metal Ions ◽  
Hexagonal Structure ◽  
Cds Nanoparticles ◽  
Sem Images ◽  
Semiconducting Properties ◽  
Mn Doped

CdS nanoparticles and thin films are well known for their excellent semiconducting properties. When transition metal ions are doped into the CdS, it exhibits magnetic properties in addition to semiconducting properties and they are termed as dilute magnetic semiconductors (DMSs). In this paper, we discuss the preparation of sodium bis(2-ethylhexyl) sulfonsuccinate (AOT) capped CdS nanoparticles and thin films doped with magnetic impurity Mn. Sodium bis(2-ethulexyl) sulfonsuccinate (AOT), capping agent promotes the uniform formation of nanoparticles. Optical characterizations are made using the UV-Vis spectrometer, PL, and FTIR. XRD shows the hexagonal structure of the CdS. SEM images and EDS measurements were made for the thin films. EPR shows the clear hyperfine lines corresponding to Mn2+ion in the CdS nanoparticles.

Magnetic Properties of Mn-doped SnO2 Thin Films Prepared by the Sol-Gel Dip Coating Method for Dilute Magnetic Semiconductors

2014 ◽  
Vol 97 (10) ◽  
pp. 3184-3191 ◽  
Author(s):  
Sivashankaran Nair Sujatha Lekshmy ◽  
Vijayam Sukumaran Nair Anitha ◽  
PuthenKadathil Vargehese Thomas ◽  
Kunjkunju Joy
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Semiconductors ◽  
Sol Gel ◽  
Dilute Magnetic Semiconductors ◽  
Dip Coating ◽  
Coating Method ◽  
Sno2 Thin Films ◽  
Dip Coating Method ◽  
Mn Doped

Magnetic and Electronic Properties of n-type (Al,Ga) co-doped Zn(Cu)O based Dilute Magnetic Semiconductors

2007 ◽  
Vol 999 ◽  
Author(s):  
Deepayan Chakraborti ◽  
John T. Prater ◽  
Jagdish Narayan
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Magnetic Polaron ◽  
F Center ◽  
Doped Zno ◽  
Ferromagnetic Ordering ◽  
Semiconducting Thin Films ◽  
Ga Doping ◽  
Co Doped

AbstractSystematic studies on the epitaxial growth and the effect of n-type (Al,Ga) doping on the magnetic and electrical properties of 2.0 % Cu doped ZnO dilute magnetic semiconducting thin films deposited on c-plane sapphire single crystals by pulsed laser deposition are reported here. An decrease in more than 3 orders of magnitude in resistivity from 2×101 Ohm cm for the 2.0 % Cu doped ZnO to ~5×10-3 Ohm cm for Al and Ga codoped films is observed. This increase in conductivity does not show any effect on ferromagnetic ordering thus contradicting the claim of free carrier mediated exchange as being responsible for ferromagnetic ordering in these DMS systems. A bound magnetic polaron or F-center mediated exchange is a possible explanation for the origin of ferromagnetism in these ZnO based DMS thin films.

Dielectric and magnetic properties of dilute magnetic semiconductors Ag-doped ZnO thin films

2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Ayesha Usman ◽  
Hina Nazli ◽  
Riffat Sagheer ◽  
Saira Riaz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Zno Thin Films ◽  
Doped Zno

Effect of Substrate Variation on Electrical and Magnetic Properties of Mn Doped ZnO of Dilute Magnetic Semiconductors

2005 ◽  
Vol 891 ◽  
Author(s):  
Srikanth Manchiraju ◽  
Govind Mundada ◽  
Ted Kehl ◽  
Craig Vera ◽  
Rishi Patel ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical And Magnetic Properties ◽  
Quartz Substrates ◽  
Mn Doped

ABSTRACTIn this paper, the effect of substrate on the domain structure growth and electrical and magnetic properties of epitaxial Mn-doped Zn0.8Mn0.15O (ZnMnO) thin films has been investigated. Epitaxial thin films of ZnMnO dilute magnetic semiconductors (DMS) were grown on various substrates such as single crystal sapphire, single crystal silicon, and quartz substrates using Pulsed Laser Deposition (PLD) technique . Structural, surface, magnetic, and optical properties have been observed on these films using X-Ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and Raman spectroscopy. X-Ray Diffraction shows that films are highly epitaxial and c-axis oriented with some induced strain. AFM images show that film surface is smooth with RMS roughness of the order of 1-2 nm over 5*5sq.micron. Magnetic characteristic properties such as carrier concentration, mobility, and temperature dependent resistivity were also investigated. Carrier concentration decreases and mobility increases for both the films on silicon and quartz substrates when compared to film on sapphire.

Deposition of Tin Oxide Thin Films by Successive Ionic Layer Adsorption Reaction Method and Its Characterization

2018 ◽  
Vol 18 (4) ◽  
pp. 2569-2575 ◽  
Author(s):  
Shipra Raj ◽  
Sharad Kumar ◽  
Suneel Kumar Srivastava ◽  
Pradip Kar ◽  
Poulomi Roy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Oxide Thin Films ◽  
Reaction Method ◽  
Adsorption Reaction ◽  
Layer Adsorption ◽  
Ionic Layer
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