Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface

2005 ◽  
Vol 86 (8) ◽  
pp. 081917 ◽  
Author(s):  
R. Duffy ◽  
V. C. Venezia ◽  
J. Loo ◽  
M. J. P. Hopstaken ◽  
M. A. Verheijen ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Concentration ◽  
Temperature Diffusion ◽  
Phosphorus In Silicon

Low-temperature diffusion of phosphorus in silicon

1988 ◽  
Vol 31 (9) ◽  
pp. 737-740 ◽  
Author(s):  
A. N. Gorban' ◽  
V. A. Gorodokin
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion ◽  
Phosphorus In Silicon

scholarly journals Elucidation of the Crystal Growth Characteristics of SnO2 Nanoaggregates Formed by Sequential Low-Temperature Sol-Gel Reaction and Freeze Drying

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1738
Author(s):  
Saeid Vafaei ◽  
Alexander Wolosz ◽  
Catlin Ethridge ◽  
Udo Schnupf ◽  
Nagisa Hattori ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Freeze Drying ◽  
Sno2 Nanoparticles ◽  
Sol Gel ◽  
Functional Materials ◽  
Cost Effective ◽  
High Concentration

SnO2 nanoparticles are regarded as attractive, functional materials because of their versatile applications. SnO2 nanoaggregates with single-nanometer-scale lumpy surfaces provide opportunities to enhance hetero-material interfacial areas, leading to the performance improvement of materials and devices. For the first time, we demonstrate that SnO2 nanoaggregates with oxygen vacancies can be produced by a simple, low-temperature sol-gel approach combined with freeze-drying. We characterize the initiation of the low-temperature crystal growth of the obtained SnO2 nanoaggregates using high-resolution transmission electron microscopy (HRTEM). The results indicate that Sn (II) hydroxide precursors are converted into submicrometer-scale nanoaggregates consisting of uniform SnO2 spherical nanocrystals (2~5 nm in size). As the sol-gel reaction time increases, further crystallization is observed through the neighboring particles in a confined part of the aggregates, while the specific surface areas of the SnO2 samples increase concomitantly. In addition, X-ray photoelectron spectroscopy (XPS) measurements suggest that Sn (II) ions exist in the SnO2 samples when the reactions are stopped after a short time or when a relatively high concentration of Sn (II) is involved in the corresponding sol-gel reactions. Understanding this low-temperature growth of 3D SnO2 will provide new avenues for developing and producing high-performance, photofunctional nanomaterials via a cost-effective and scalable method.

scholarly journals Start-up Strategies for Anaerobic Ammonia Oxidation (Anammox) in In-Situ Nitrogen Removal from Polluted Groundwater in Rare Earth Mining Areas

2021 ◽  
Vol 13 (8) ◽  
pp. 4591
Author(s):  
Shuanglei Huang ◽  
Daishe Wu
Keyword(s):  
Rare Earth ◽  
Low Temperature ◽  
Removal Efficiency ◽  
Nitrogen Removal ◽  
Ex Situ ◽  
High Concentration ◽  
Low Concentration ◽  
Start Up ◽  
Anammox Activity

The tremendous input of ammonium and rare earth element (REE) ions released by the enormous consumption of (NH4)2SO4 in in situ leaching for ion-adsorption RE mining caused serious ground and surface water contamination. Anaerobic ammonium oxidation (anammox) was a sustainable in situ technology that can reduce this nitrogen pollution. In this research, in situ, semi in situ, and ex situ method of inoculation that included low-concentration (0.02 mg·L−1) and high-concentration (0.10 mg·L−1) lanthanum (La)(III) were adopted to explore effective start-up strategies for starting up anammox reactors seeded with activated sludge and anammox sludge. The reactors were refrigerated for 30 days at 4 °C to investigate the effects of La(III) during a period of low-temperature. The results showed that the in situ and semi in situ enrichment strategies with the addition of La(III) at a low-concentration La(III) addition (0.02 mg·L−1) reduced the length of time required to reactivate the sludge until it reached a state of stable anammox activity and high nitrogen removal efficiency by 60–71 days. The addition of La(III) promoted the formation of sludge floc with a compact structure that enabled it to resist the adverse effects of low temperature and so to maintain a high abundance of AnAOB and microbacterial community diversity of sludge during refrigeration period. The addition of La(III) at a high concentration caused the cellular percentage of AnAOB to decrease from 54.60 ± 6.19% to 17.35 ± 6.69% during the enrichment and reduced nitrogen removal efficiency to an unrecoverable level to post-refrigeration.

Formation of Pt decorated Ni–Pt nanocubes through low temperature atomic diffusion – time-resolved elemental analysis of nanoparticle formation

Nanoscale ◽  
2015 ◽  
Vol 7 (21) ◽  
pp. 9927-9934 ◽  
Author(s):  
A. Nagao ◽  
K. Higashimine ◽  
J. L. Cuya Huaman ◽  
T. Iwamoto ◽  
T. Matsumoto ◽  
...  
Keyword(s):  
Low Temperature ◽  
Elemental Analysis ◽  
Diffusion Time ◽  
Atomic Diffusion ◽  
Pt Catalysts ◽  
Time Resolved ◽  
Nanoparticle Formation ◽  
The Core ◽  
Temperature Diffusion

Low temperature diffusion of Pt atoms from the core to the corners and edges of the Ni cube results in the preparation of potential novel cage-structured Pt catalysts.

Low temperature diffusion measurements on d.c. sputtered multilayers of Nb/Ta

1984 ◽  
Vol 3 (3) ◽  
pp. 217-220 ◽  
Author(s):  
R. E. Somekh ◽  
Z. H. Barber ◽  
C. S. Baxter ◽  
P. E. Donovan ◽  
J. E. Evetts ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 421-426
Author(s):  
Jan Vobecký ◽  
Volodymyr Komarnitskyy ◽  
Vít Záhlava ◽  
Pavel Hazdra
Keyword(s):  
Low Temperature ◽  
Active Sites ◽  
Carrier Lifetime ◽  
High Energy ◽  
Deep Levels ◽  
Radiation Defects ◽  
Metal Atoms ◽  
Temperature Diffusion ◽  
Concentration Enhancement ◽  
Application Potential

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the diodes were implanted with high-energy He2+ to assess, if the radiation defects enhance the concentration of metal atoms at electrically active sites and what is the application potential for carrier lifetime control. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt, Pd and V form deep levels in increased extent at the presence of radiation defects above 600 oC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC 0.203 eV) and donor level V0/+ (EC 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 oC.

Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI

1985 ◽  
Vol 59 ◽  
Author(s):  
Karlheinz Hölzlein ◽  
G. Pensl ◽  
M. Schulz ◽  
N. M. Johnson
Keyword(s):  
Low Temperature ◽  
Heat Treatments ◽  
Experimental Results ◽  
Interface Model ◽  
Trap States ◽  
High Concentration ◽  
Oxygen Donor ◽  
Heat Treated ◽  
Processing Steps

ABSTRACTCz-grown Si samples containing a high concentration of oxygen are investigated after various processing steps by DLTS. Heat treatments ranging from 500°C–1000°C are performed to study the formation and annihilation of the “New Oxygen Donor” (ND) traps. Hydrogenation at low temperature leads to a reduction of the ND trap states. The experimental results confirm the “SiOx Interface Model” which assumes two differing types of interfacerelated states.

scholarly journals Influence of Defects on Low Temperature Diffusion of Boron in SiC

2011 ◽  
Vol 02 (09) ◽  
pp. 1205-1211 ◽  
Author(s):  
Ilkham G. Atabaev ◽  
Tojiddin M. Saliev ◽  
Dilmurad Saidov ◽  
Vadim A. Pak ◽  
Khimmatali Juraev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion
Sign in / Sign up

Export Citation Format

Share Document