Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth

2005 ◽  
Vol 86 (4) ◽  
pp. 041909 ◽  
Author(s):  
A. H. M. Smets ◽  
W. M. M. Kessels ◽  
M. C. M. van de Sanden
Keyword(s):  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Film ◽  
Diffusion Controlled ◽  
Hydrogenated Amorphous

Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Device Fabrication ◽  
Surface Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

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