Electrical resistance of low-angle tilt grain boundaries in acceptor-doped SrTiO3 as a function of misorientation angle

2005 ◽  
Vol 97 (5) ◽  
pp. 053502 ◽  
Author(s):  
Roger A. De Souza ◽  
Jürgen Fleig ◽  
Joachim Maier ◽  
Zaoli Zhang ◽  
Wilfried Sigle ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Misorientation Angle ◽  
Electrical Resistance

scholarly journals Nanocrystalline Porous Hydrogen Storage Based on Vanadium and Titanium Nitrides

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
A. Goncharov ◽  
A. Guglya ◽  
A. Kalchenko ◽  
E. Solopikhina ◽  
V. Vlasov ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Electrical Resistance ◽  
Ion Beam ◽  
Hydrogen Desorption ◽  
Titanium Nitrides ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Mixed Beam ◽  
20 Nm ◽  
Absorption Characteristics

This review summarizes results of our study of the application of ion-beam assisted deposition (IBAD) technology for creation of nanoporous thin-film structures that can absorb more than 6 wt.% of hydrogen. Data of mathematical modeling are presented highlighting the structure formation and component creation of the films during their deposition at the time of simultaneous bombardment by mixed beam of nitrogen and helium ions with energy of 30 keV. Results of high-resolution transmission electron microscopy revealed that VNxfilms consist of 150–200 nm particles, boundaries of which contain nanopores of 10–15 nm diameters. Particles themselves consist of randomly oriented 10–20 nm nanograins. Grain boundaries also contain nanopores (3–8 nm). Examination of the absorption characteristics of VNx, TiNx, and(V,Ti)Nxfilms showed that the amount of absorbed hydrogen depends very little on the chemical composition of films, but it is determined by the structure pore. The amount of absorbed hydrogen at 0.3 MPa and 20°C is 6-7 wt.%, whereas the bulk of hydrogen is accumulated in the grain boundaries and pores. Films begin to release hydrogen even at 50°C, and it is desorbed completely at the temperature range of 50–250°C. It was found that the electrical resistance of films during the hydrogen desorption increases 104times.

scholarly journals Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Thuc Hue Ly ◽  
David J. Perello ◽  
Jiong Zhao ◽  
Qingming Deng ◽  
Hyun Kim ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Molybdenum Disulfide ◽  
Misorientation Angle ◽  
Electrical Transport

The favourable large misorientation angle grain boundaries in graphene

Nanoscale ◽  
2015 ◽  
Vol 7 (47) ◽  
pp. 20082-20088 ◽  
Author(s):  
Xiuyun Zhang ◽  
Ziwei Xu ◽  
Qinghong Yuan ◽  
John Xin ◽  
Feng Ding
Keyword(s):  
Grain Boundaries ◽  
Misorientation Angle

Influence of grain boundaries misorientation angle on intergranular corrosion in 2024-T3 aluminium

2011 ◽  
Vol 29 (4) ◽  
pp. 305-311 ◽  
Author(s):  
A. Bałkowiec ◽  
J. Michalski ◽  
H. Matysiak ◽  
K. J. Kurzydlowski
Keyword(s):  
Grain Boundaries ◽  
Misorientation Angle ◽  
Intergranular Corrosion

Impact of Grain Boundary Character on Electrical Property in Polycrystalline Silicon

1999 ◽  
Vol 586 ◽  
Author(s):  
Shu Hamada ◽  
Koichi Kawahara ◽  
Sadahiro Tsurekawa ◽  
Tadao Watanabe ◽  
Takashi Sekiguchi
Keyword(s):  
Electrical Activity ◽  
Temperature Dependence ◽  
Grain Boundaries ◽  
Band Gap ◽  
Misorientation Angle ◽  
Polycrystalline Silicon ◽  
Dominant Role ◽  
Localized States ◽  
Localized State ◽  
The Difference

ABSTRACTGrain boundaries in polycrystalline silicon are most likely to generate localized states in band gap. The localized states play a dominant role in determining the performance of solar cells by acting as traps or recombination center of carriers. In the present investigation, the scanning electron microscope - electron channeling pattern(SEM/ECP) method and SEM - electron back scattered diffraction pattern(SEM/EBSD) technique were applied to characterize the grain boundaries in p-type polycrystalline silicon with 99.999%(5N) in purity. Thereafter, temperature dependence of electrical activity of individual grain boundaries was measured by an electron beam induced current(EBIC) technique.It has been found that temperature dependence of EBIC contrast at grain boundaries can change, depending on the misorientation angle the orientation of the boundary plane. The results can be explained by the difference in the position of the localized state within the band gap on the basis of the Shockley-Read-Hall statistics. The {111} ∑3 symmetrical tilt boundary has shallow states, while high ∑ boundaries have deep states. Low angle boundaries reveal high electrical activities. The EBIC contrast at low angle boundaries was found to increase with increasing misorientation angle up to 2° followed by an almost constant value. High electrical activity at low angle boundaries is probably attributed to a stress field of primary dislocations forming low angle boundaries.

Grain Boundary and Misorientation Angle Dependent Thermal Transport in Single-layer MoS2

Nanoscale ◽  
2022 ◽  
Author(s):  
Ke Xu ◽  
Ting Liang ◽  
Zhisen Zhang ◽  
Xuezheng Cao ◽  
Meng Han ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Misorientation Angle ◽  
Thermal Transport ◽  
Single Layer ◽  
Large Area ◽  
Grain Misorientation

Grain boundaries (GBs) are inevitable defects in large-area MoS2 samples but play a key role in their properties, however, the influence of grain misorientation on thermal transport remains largely unknown...

Motion of Grain Boundaries: Experiments on Bicrystals

2015 ◽  
Vol 5 ◽  
pp. 247-271
Author(s):  
Dmitri A. Molodov
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Misorientation Angle ◽  
Elevated Temperatures ◽  
Activation Enthalpy ◽  
Boundary Migration ◽  
Boundary Energy ◽  
Boundary Plane ◽  
Migration Behavior ◽  
Twist Boundaries

Recent research on grain boundary migration is reviewed. Novel in-situ measuring techniques based on orientation contrast imaging and the experimental results obtained on specially grown bicrystals are presented. Particularly, the investigated faceting and migration behavior of low angle grain boundaries under the curvature force in aluminum bicrystals was addressed. In contrast to the pure tilt boundaries, which remained straight/flat and immobile during annealing at elevated temperatures, mixed tilt-twist boundaries readily assumed a curved shape and steadily moved under the capillary force. Computational analysis revealed that this behavior is due to the inclinational anisotropy of grain boundary energy, which in turn depends on boundary geometry. The migration of planar grain boundaries induced by a magnetic field was measured in bismuth and zinc bicrystals. Various structurally different boundaries were investigated. The results revealed that grain boundary mobility essentially depends on the misorientation angle and the inclination of the boundary plane. Stress driven boundary migration in aluminium bicrystals was observed to be coupled to a tangential translation of the grains. The activation enthalpy of high angle boundary migration was found to vary non-monotonously with misorientation angle, whereas for low angle boundaries the migration activation enthalpy was virtually the same. The motion of the mixed tilt-twist boundaries under stress was observed to be accompanied by both the translation of adjacent grains parallel to the boundary plane and their rotation around the boundary plane normal.

Observations of Interaction Between Magnetic Domain Wall and Grain Boundaries in Fe-3wt%Si Alloy by Kerr Microscopy

1999 ◽  
Vol 586 ◽  
Author(s):  
K. Kawahara ◽  
Y. Yagyu ◽  
S. Tsurekawa ◽  
T. Watanabe
Keyword(s):  
Domain Wall ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Domain Structure ◽  
Misorientation Angle ◽  
Magnetic Domain ◽  
Magnetic Domain Structure ◽  
Magnetic Domain Wall ◽  
Domain Structures ◽  
Grain Boundary Plane

ABSTRACTMagnetic domain structures in Fe-3wt%Si alloy have been observed by a Kerr microscopy to understand the interaction between the magnetic domain wall and grain boundaries. It was found that the domain structures in the vicinity of the grain boundary depend on the misorientation angle; the high angle random boundary disturbs the magnetic domain structure more than the low angle boundary. In addition to the misorientation angle, magnetic domain structures were affected by the inclination of the grain boundary plane. Moreover, dynamic observations of rearrangement of the magnetic domain structure during magnetization revealed that grain boundaries could act as the sink and/or the source for magnetic domains.

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