scholarly journals Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Thuc Hue Ly ◽  
David J. Perello ◽  
Jiong Zhao ◽  
Qingming Deng ◽  
Hyun Kim ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Molybdenum Disulfide ◽  
Misorientation Angle ◽  
Electrical Transport

scholarly journals A molecular dynamics study on the tribological behavior of molybdenum disulfide with grain boundary defects during scratching processes

Friction ◽  
2020 ◽  
Author(s):  
Boyu Wei ◽  
Ning Kong ◽  
Jie Zhang ◽  
Hongbo Li ◽  
Zhenjun Hong ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Wear Resistance ◽  
Grain Boundary ◽  
Molybdenum Disulfide ◽  
Adhesion Strength ◽  
Misorientation Angle ◽  
Tribological Behavior ◽  
Md Simulations ◽  
Breaking Load ◽  
Indentation Process

AbstractThe effect of grain boundary (GB) defects on the tribological properties of MoS2 has been investigated by molecular dynamics (MD) simulations. The GB defects-containing MoS2 during scratching process shows a lower critical breaking load than that of indentation process, owing to the combined effect of pushing and interlocking actions between the tip and MoS2 atoms. The wear resistance of MoS2 with GB defects is relevant to the misorientation angle due to the accumulation of long Mo-S bonds around the GBs. Weakening the adhesion strength between the MoS2 and substrate is an efficient way to improve the wear resistance of MoS2 with low-angle GBs.

scholarly journals Visualization of Defect-Induced Excitonic Properties of the Edges and Grain Boundaries in Synthesized Monolayer Molybdenum Disulfide

2016 ◽  
Vol 120 (42) ◽  
pp. 24080-24087 ◽  
Author(s):  
A. E. Yore ◽  
K. K. H. Smithe ◽  
W. Crumrine ◽  
A. Miller ◽  
J. A. Tuck ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Molybdenum Disulfide ◽  
Excitonic Properties

Predictive Structure-Property Correlations for SrtiO3 Grain Boundaries

2001 ◽  
Vol 7 (S2) ◽  
pp. 292-293
Author(s):  
Pradyumna L. Prabhumirashi ◽  
Kevin D. Johnson ◽  
Vinayak P. Dravid
Keyword(s):  
Grain Boundaries ◽  
Electrical Transport ◽  
Current Control ◽  
Polycrystalline Materials ◽  
Structure Property ◽  
Electrical Transport Properties ◽  
Potential Barriers ◽  
Impurity Segregation ◽  
Direct Observations ◽  
Internal Potential

In polycrystalline materials the trapping of charge at interfaces has a decisive influence on the electrical transport properties through the formation of electrostatic potential barriers. This can either be an intrinsic phenomenon or can be related to impurity segregation leading to complex defect centers. This plays a key role in technologically important systems, especially those having electrically active interfaces, e.g.,p-n junctions in semiconductors and grain boundaries in electroceramics.Electroceramic oxides such as ZnO and SrTiO3 are common systems that exhibit the tendency of current control by internal potential barriers. While bulk measurements, either electrical (e.g. P-E, C-V, I-V), or optical (e.g. Raman) have contributed significantly to the understanding of charged interfaces, there are a very few direct observations of electrical activity at a nanometer level. For instance, it has been recognized that space charge and dopant segregation at the grain boundary are inter-related.

The favourable large misorientation angle grain boundaries in graphene

Nanoscale ◽  
2015 ◽  
Vol 7 (47) ◽  
pp. 20082-20088 ◽  
Author(s):  
Xiuyun Zhang ◽  
Ziwei Xu ◽  
Qinghong Yuan ◽  
John Xin ◽  
Feng Ding
Keyword(s):  
Grain Boundaries ◽  
Misorientation Angle

Influence of grain boundaries misorientation angle on intergranular corrosion in 2024-T3 aluminium

2011 ◽  
Vol 29 (4) ◽  
pp. 305-311 ◽  
Author(s):  
A. Bałkowiec ◽  
J. Michalski ◽  
H. Matysiak ◽  
K. J. Kurzydlowski
Keyword(s):  
Grain Boundaries ◽  
Misorientation Angle ◽  
Intergranular Corrosion

Impact of Grain Boundary Character on Electrical Property in Polycrystalline Silicon

1999 ◽  
Vol 586 ◽  
Author(s):  
Shu Hamada ◽  
Koichi Kawahara ◽  
Sadahiro Tsurekawa ◽  
Tadao Watanabe ◽  
Takashi Sekiguchi
Keyword(s):  
Electrical Activity ◽  
Temperature Dependence ◽  
Grain Boundaries ◽  
Band Gap ◽  
Misorientation Angle ◽  
Polycrystalline Silicon ◽  
Dominant Role ◽  
Localized States ◽  
Localized State ◽  
The Difference

ABSTRACTGrain boundaries in polycrystalline silicon are most likely to generate localized states in band gap. The localized states play a dominant role in determining the performance of solar cells by acting as traps or recombination center of carriers. In the present investigation, the scanning electron microscope - electron channeling pattern(SEM/ECP) method and SEM - electron back scattered diffraction pattern(SEM/EBSD) technique were applied to characterize the grain boundaries in p-type polycrystalline silicon with 99.999%(5N) in purity. Thereafter, temperature dependence of electrical activity of individual grain boundaries was measured by an electron beam induced current(EBIC) technique.It has been found that temperature dependence of EBIC contrast at grain boundaries can change, depending on the misorientation angle the orientation of the boundary plane. The results can be explained by the difference in the position of the localized state within the band gap on the basis of the Shockley-Read-Hall statistics. The {111} ∑3 symmetrical tilt boundary has shallow states, while high ∑ boundaries have deep states. Low angle boundaries reveal high electrical activities. The EBIC contrast at low angle boundaries was found to increase with increasing misorientation angle up to 2° followed by an almost constant value. High electrical activity at low angle boundaries is probably attributed to a stress field of primary dislocations forming low angle boundaries.

Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7930-7937 ◽  
Author(s):  
Sina Najmaei ◽  
Matin Amani ◽  
Matthew L. Chin ◽  
Zheng Liu ◽  
A. Glen Birdwell ◽  
...  
Keyword(s):  
Transport Properties ◽  
Molybdenum Disulfide ◽  
Electrical Transport ◽  
Electrical Transport Properties

The nature of [001] tilt grain boundaries in YBa2Cu3O7−x

1991 ◽  
Vol 6 (5) ◽  
pp. 908-915 ◽  
Author(s):  
Frank W. Gayle ◽  
Debra L. Kaiser
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Pattern Matching ◽  
Electrical Transport ◽  
Polycrystalline Material ◽  
Transformation Strain ◽  
Local Coordination ◽  
Tilt Boundaries ◽  
Bulk Scale ◽  
Microscopy Techniques

Fifty-two faceted grain boundary segments ([001] tilt boundaries) in clusters of bulk-scale YBa2Cu3O7−xcrystals having coincident c-axes were characterized by optical microscopy techniques. Grain boundary orientations were widely distributed. All grain boundaries, except those far from the symmetric condition and those with {110} facets, exhibited well-developed matching of the twin domains across the boundary. It is suggested that this newly reported phenomenon of twin pattern matching occurs due to a local coordination of the tetragonal → orthorhombic transformation strain across grain boundaries and may be beneficial with regard to electrical transport in highly textured polycrystalline material.

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