Low-temperature d.c. transport in anisotropic dirty thin dielectric films

2004 ◽  
Vol 114 ◽  
pp. 677-678
Author(s):  
S. Teber
Keyword(s):  
Low Temperature ◽  
Dielectric Films ◽  
Thin Dielectric Films

Comparison of Gate Oxide Processing Techniques for Thin Dielectric Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Pat Schay ◽  
Fuyu Lin ◽  
Sergio Ajuria ◽  
John Stih
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Gate Oxide ◽  
Electrical Performance ◽  
Dielectric Films ◽  
Total Thickness ◽  
Large Area ◽  
Processing Techniques ◽  
Thin Dielectric Films

AbstractThis paper focuses on establishing a baseline for thin dielectric processes including: low temperature, dilute, stacked (TEOS), oxynitride, and high temperature annealed (grow‐anneal‐grow) oxidation. 105Å (total thickness) gate dielectrics were grown or deposited for this study. The stack oxide showed the highest Vbd yields for both large‐area and edge‐intensive capacitors, but the poorest Qbd. The N2O oxide yielded mediocre Vbd and Qbd. The low temperature and dilute oxides showed early breakdowns, but acceptable Qbd. 900°C thermal gate oxide showed slightly better average Vbd than low temperature and dilute oxides but comparable Qbd. The high temperature annealed oxide appears to have the best electrical performance, but the worst uniformity.

scholarly journals Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Andrey A. Pil’nik ◽  
Andrey A. Chernov ◽  
Damir R. Islamov
Keyword(s):  
Charge Transport ◽  
Thin Layers ◽  
Jump Processes ◽  
Dielectric Films ◽  
Algebraic Equations ◽  
Markov Jump ◽  
Statistical Solution ◽  
Linear Algebraic Equations ◽  
Special Cases ◽  
Thin Dielectric Films

AbstractIn this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D transport through dielectric layers, might incorrectly describe the charge flow through ultra-thin layers with a countable number of traps, taking into account the injection from and extraction to electrodes (contacts). A comparison with other theoretical models shows a good agreement. The developed model can be applied to one-, two- and three-dimensional systems. The model, formulated in a system of linear algebraic equations, can be implemented in the computational code using different optimized libraries. We demonstrated that analytical solutions can be found for stationary cases for any trap distribution and for the dynamics of system evolution for special cases. These solutions can be used to test the code and for studying the charge transport properties of thin dielectric films.

Local range order in thin dielectric films of gallium phosphate

1996 ◽  
Vol 279 (1-2) ◽  
pp. 59-65 ◽  
Author(s):  
F. Tourtin ◽  
A. Ibanez ◽  
A. Haidoux ◽  
E. Philippot
Keyword(s):  
Range Order ◽  
Dielectric Films ◽  
Local Range ◽  
Thin Dielectric Films ◽  
Gallium Phosphate

Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films

2006 ◽  
Vol 89 (13) ◽  
pp. 133109 ◽  
Author(s):  
M. N. Chang ◽  
C. Y. Chen ◽  
M. J. Yang ◽  
C. H. Chien
Keyword(s):  
Photovoltaic Effect ◽  
Dielectric Films ◽  
Atomic Force ◽  
Thin Dielectric Films
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