Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si∕SiO2 double-barrier structure

2005 ◽  
Vol 86 (1) ◽  
pp. 013508 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Hiroya Ikeda ◽  
Michiharu Tabe
Keyword(s):  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Single Electron ◽  
Potential Well ◽  
Barrier Structure ◽  
Double Barrier ◽  
Single Electron Tunneling ◽  
Double Barrier Structure

Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes

1992 ◽  
Vol 45 (24) ◽  
pp. 14407-14410 ◽  
Author(s):  
M. Tewordt ◽  
L. Marti´n-Moreno ◽  
J. T. Nicholls ◽  
M. Pepper ◽  
M. J. Kelly ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Single Electron ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Single Electron Tunneling ◽  
Double Barrier Resonant Tunneling

THE WIDTH RATIO OF TWO BARRIERS IN RESONANT TUNNELING

2003 ◽  
Vol 17 (03) ◽  
pp. 105-109 ◽  
Author(s):  
MASATO OHMUKAI
Keyword(s):  
Transmission Coefficient ◽  
Resonant Tunneling ◽  
Width Ratio ◽  
Total Width ◽  
Barrier Width ◽  
Barrier Structure ◽  
Double Barrier ◽  
Two Parameters ◽  
Double Barrier Structure ◽  
Two Barriers

Numerical calculations by a transfer matrix method have been performed to obtain the transmission coefficient of rectangular double barrier structures. The dependence of the well width, barrier width and the barrier height was systematically investigated. When the width ratio of the two barriers was varied on condition that a total width was fixed, the transmission coefficient at a resonance is varied while that at a valley region is not. It is concluded that the resonant tunneling is characterized by two parameters: total width and the width ratio. Our results clarify the transition of transmission spectrum from a single barrier to a double barrier structure.

Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties

2017 ◽  
Vol 26 (04) ◽  
pp. 1740022 ◽  
Author(s):  
Banasree Das ◽  
Manas Kumar Parai
Keyword(s):  
Simple Model ◽  
Electronic Transport ◽  
Material Properties ◽  
Resonant Tunneling ◽  
Barrier Structure ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Silvaco Atlas ◽  
Double Barrier Structure ◽  
Peak To Valley Ratio

In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. GaAs/AlGaAs based RTD is used as the reference one to obtain the characteristics due to parametric variations. To fulfil this purpose a simple model of resonant electronic transport through a double-barrier structure is developed. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered. Different materials of lower effective mass are also taken into consideration to improve Peak to Valley Ratio (PVR). The Indium (In) based materials are considered to compare the characteristics obtained from the conventional GaAs based RTD structure. All these proposed structures are simulated using Silvaco Atlas software.

Resonant Tunneling Effect in Si/SiO2 Double Barrier Structure

2001 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Takuma Ishihara ◽  
Masanori Iwasaki ◽  
Michiharu Tabe
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Effect ◽  
Barrier Structure ◽  
Double Barrier ◽  
Resonant Tunneling Effect ◽  
Double Barrier Structure

SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER NANOSTRUCTURES

1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM
Keyword(s):  
Coulomb Blockade ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Theoretical Models ◽  
Single Electron ◽  
Double Barrier ◽  
Current Voltage ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.

InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure

2019 ◽  
Vol 114 (5) ◽  
pp. 053509 ◽  
Author(s):  
Biying Nie ◽  
Jianliang Huang ◽  
Chengcheng Zhao ◽  
Wenjun Huang ◽  
Yanhua Zhang ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Barrier Structure ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Structure

Photo-Assisted Resonant Tunneling Through Localized States in AlAs/GaAs Double-Barrier Structure With Undoped Spacer Layers

1997 ◽  
Vol 484 ◽  
Author(s):  
H. Y. Chu ◽  
K. -S. Lee ◽  
H. -H. Park ◽  
E. -H. Lee
Keyword(s):  
Laser Power ◽  
Resonant Tunneling ◽  
Localized States ◽  
Barrier Structure ◽  
Double Barrier ◽  
Localization Effect ◽  
Photocurrent Measurement ◽  
Double Barrier Structure ◽  
Undoped Gaas

AbstractWe report on the evidence of photo-assisted resonant tunneling through localized states in AlAs/GaAs double-barrier structures (DBSs) with undoped GaAs spacers. In the photocurrent measurement, additional peaks were observed at voltages lower than that of resonance and were enhanced with the laser power. This behavior was more pronounced as the thickness of spacer layers in the DBS increased. These results are attributed to the resonant tunneling of electrons through the localized states, they are induced in the neighboring barriers, by the photoexcited carriers in spacers. We discuss the localization effect of photoexcited carriers on the resonant tunneling.

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