InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure
2002 ◽
Vol 320
(1-4)
◽
pp. 396-399
◽
Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties
2017 ◽
Vol 26
(04)
◽
pp. 1740022
◽
Keyword(s):
1992 ◽
Vol 12
(1)
◽
pp. 53-56
◽
2003 ◽
Vol 17
(03)
◽
pp. 105-109
◽
1987 ◽
Vol 140
(1)
◽
pp. K23-K25
◽
Keyword(s):