Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon

2005 ◽  
Vol 97 (3) ◽  
pp. 033509 ◽  
Author(s):  
Jinggang Lu ◽  
George Rozgonyi ◽  
Axel Schönecker ◽  
Astrid Gutjahr ◽  
Zhenxian Liu
Keyword(s):  
Carbon Precipitation

ASTM A710

Alloy Digest ◽  
1990 ◽  
Vol 39 (4) ◽  
Keyword(s):  
Fracture Toughness ◽  
Tensile Properties ◽  
Precipitation Hardening ◽  
Steel Plate ◽  
High Strength ◽  
Heat Treating ◽  
Low Carbon ◽  
Bethlehem Steel Corporation ◽  
Strength Alloy ◽  
Carbon Precipitation

Abstract ASTM A710 is a low-carbon, precipitation hardening high-strength alloy steel plate. It is well suited to critical applications. This datasheet provides information on composition and tensile properties as well as fracture toughness. It also includes information on heat treating and joining. Filing Code: SA-446. Producer or source: Bethlehem Steel Corporation.

Solid state reactions between Ni3Al and SiC

1990 ◽  
Vol 5 (9) ◽  
pp. 1985-1994 ◽  
Author(s):  
T. C. Chou ◽  
T. G. Nieh
Keyword(s):  
Growth Rate ◽  
Solid State ◽  
Solid State Reactions ◽  
Growth Rate Constant ◽  
Cross Sectional ◽  
Rate Limiting Step ◽  
Nial Phase ◽  
Reaction Zones ◽  
Carbon Precipitation ◽  
Terminal Component

Solid state reactions between SiC and Ni3Al were studied at 1000°C for different times. Multi-reaction-layers were generated in the interdiffusion zone. Cross-sectional views of the reaction zones show the presence of three distinguishable layers. The Ni3Al terminal component is followed by NiAl, Ni5.4Al1Si2, Ni(5.4−x)Al1Si2 + C layers, and the SiC terminal component. The Ni5.4Al1Si2 layer shows carbon precipitation free, while modulated carbon bands were formed in the Ni(5.4−x)Al1Si2 + C layer. The NiAl layer shows dramatic contrast difference with respect to the Ni3Al and Ni5.4Al1Si2 layers, and is bounded by the Ni3Al/NiAl and Ni5.4Al1Si2/NiAl phase boundaries. The kinetics of the NiAl formation is limited by diffusion, and the growth rate constant is measured to be 2 ⊠ 10−10 cm2/s. The thickness of the reaction zone on the SiC side is always thinner than that on the Ni3Al side and no parabolic growth rate is obeyed, suggesting that the decomposition of the SiC may be a rate limiting step for the SiC/Ni3Al reactions. The carbon precipitates were found to exist in either a disordered or partially ordered (graphitic) state, depending upon their locations from the SiC interface. The formation of NiAl phase is discussed based on an Al-rejection model, as a result of a prior formation of Ni–Al–Si ternary phase. A thermodynamic driving force for the SiC/Ni3Al reactions is suggested.

scholarly journals Erratum: Corrigendum: Carbon precipitation from heavy hydrocarbon fluid in deep planetary interiors

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Sergey S. Lobanov ◽  
Pei-Nan Chen ◽  
Xiao-Jia Chen ◽  
Chang-Sheng Zha ◽  
Konstantin D. Litasov ◽  
...  
Keyword(s):  
Planetary Interiors ◽  
Heavy Hydrocarbon ◽  
Hydrocarbon Fluid ◽  
Carbon Precipitation

Thin graphite films formation by carbon precipitation in metals: diffusion approach

2015 ◽  
Vol 10 (1) ◽  
pp. 012506 ◽  
Author(s):  
Petr V. Shvets ◽  
Alexander N. Obraztsov
Keyword(s):  
Carbon Precipitation

scholarly journals Carbon Micronymphaea: Graphene on Vertically Aligned Carbon Nanotubes

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jong Won Choi ◽  
Seul Ki Youn ◽  
Hyung Gyu Park
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanomaterials ◽  
Chemical Vapor ◽  
Structural Features ◽  
Hybrid Structure ◽  
Operating Conditions ◽  
One Pot ◽  
Vertical Arrays ◽  
Carbon Precipitation ◽  
Grown Graphene

This paper describes the morphology of carbon nanomaterials such as carbon nanotube (CNT), graphene, and their hybrid structure under various operating conditions during a one-step synthesisviaplasma-enhanced chemical vapor deposition (PECVD). We focus on the synthetic aspects of carbon hybrid material composed of heteroepitaxially grown graphene on top of a vertical array of carbon nanotubes, called carbon micronymphaea. We characterize the structural features of this unique nanocomposite by uses of electron microscopy and micro-Raman spectroscopy. We observe carbon nanofibers, poorly aligned and well-aligned vertical arrays of CNT sequentially as the growth temperature increases, while we always discover the carbon hybrids, called carbon micronymphaea, at specific cooling rate of 15°C/s, which is optimal for the carbon precipitation from the Ni nanoparticles in this study. We expect one-pot synthesized graphene-on-nanotube hybrid structure poses great potential for applications that demand ultrahigh surface-to-volume ratios with intact graphitic nature and directional electronic and thermal transports.

Boron Segregation and Out-diffusion in Single-Crystal Si 1-y C y

2003 ◽  
Vol 765 ◽  
Author(s):  
E. J. Stewart ◽  
J.C. Sturm
Keyword(s):  
Diffusion Process ◽  
Single Crystal ◽  
Carbon Diffusion ◽  
Subsequent Oxidation ◽  
Boron Segregation ◽  
Carbon Precipitation

AbstractBoron segregation and its effect on carbon diffusion is studied in single-crystal Si1-yCy. We find that boron segregates from silicon to Si0.996C0.004 at a level m=[B]SiC/[B]Si = 1.7 during a 2 hour, 850°Cannealin N2. After this anneal, if most of the carbon is then removed from the Si1-yCy layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N2 anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.

scholarly journals Diffusion Engineering by Carbon in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Ulrich Goesele ◽  
Pierre Laveant ◽  
Rene Scholz ◽  
Norbert Engler ◽  
Peter Werner
Keyword(s):  
Point Defects ◽  
Crystalline Silicon ◽  
Bipolar Transistor ◽  
Precipitation Behavior ◽  
High Concentration ◽  
Intrinsic Point Defects ◽  
Influence Diffusion ◽  
Carbon Precipitation ◽  
Equilibrium Concentrations ◽  
Diffusion Mechanisms

AbstractThe possibility to suppress undesirable diffusion of the base dopant boron in siliconbased bipolar transistor structures by the incorporation of a high concentration of carbon has lead to renewed interest in the behavior of carbon in crystalline silicon. The present paper will review essential features of carbon in silicon including solubility, diffusion mechanisms and precipitation behavior. Based on this information the possibilities to use carbon to influence diffusion of dopants in silicon by the introduction of non-equilibrium concentrations of intrinsic point defects will be discussed as well as the reason for the relatively high resilience against carbon precipitation. Interactions between carbon and oxygen will be mentioned, especially in the context of an as yet unexplained fast out-diffusion of carbon close to the surface.

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