Solid state reactions between Ni3Al and SiC

1990 ◽  
Vol 5 (9) ◽  
pp. 1985-1994 ◽  
Author(s):  
T. C. Chou ◽  
T. G. Nieh
Keyword(s):  
Growth Rate ◽  
Solid State ◽  
Solid State Reactions ◽  
Growth Rate Constant ◽  
Cross Sectional ◽  
Rate Limiting Step ◽  
Nial Phase ◽  
Reaction Zones ◽  
Carbon Precipitation ◽  
Terminal Component

Solid state reactions between SiC and Ni3Al were studied at 1000°C for different times. Multi-reaction-layers were generated in the interdiffusion zone. Cross-sectional views of the reaction zones show the presence of three distinguishable layers. The Ni3Al terminal component is followed by NiAl, Ni5.4Al1Si2, Ni(5.4−x)Al1Si2 + C layers, and the SiC terminal component. The Ni5.4Al1Si2 layer shows carbon precipitation free, while modulated carbon bands were formed in the Ni(5.4−x)Al1Si2 + C layer. The NiAl layer shows dramatic contrast difference with respect to the Ni3Al and Ni5.4Al1Si2 layers, and is bounded by the Ni3Al/NiAl and Ni5.4Al1Si2/NiAl phase boundaries. The kinetics of the NiAl formation is limited by diffusion, and the growth rate constant is measured to be 2 ⊠ 10−10 cm2/s. The thickness of the reaction zone on the SiC side is always thinner than that on the Ni3Al side and no parabolic growth rate is obeyed, suggesting that the decomposition of the SiC may be a rate limiting step for the SiC/Ni3Al reactions. The carbon precipitates were found to exist in either a disordered or partially ordered (graphitic) state, depending upon their locations from the SiC interface. The formation of NiAl phase is discussed based on an Al-rejection model, as a result of a prior formation of Ni–Al–Si ternary phase. A thermodynamic driving force for the SiC/Ni3Al reactions is suggested.

The Formation of Nial Phase and Layered Carbon Precipitates During Ni3Al/SiC Solid State Reactions

1990 ◽  
Vol 213 ◽  
Author(s):  
T. C. Chou ◽  
T. G. Nieh
Keyword(s):  
Solid State ◽  
Reaction Zone ◽  
Solid State Reactions ◽  
Growth Rate Constant ◽  
Reaction Products ◽  
Rate Limiting Step ◽  
Limiting Step ◽  
Nial Phase ◽  
Carbon Precipitation ◽  
Rate Limiting

ABSTRACTSolid state reactions of Ni3A1 with SiC have been studied at 1000°C. Three layered reaction products consisting of NiAl Ni5,4Al1Si2, and Ni(5.4−x)A11Si2+C were formed in the reaction zone. The Ni5.4AllSi2 layer showed carbon precipitation free, while modulated carbon bands were formed in the Ni(5.4−x)A11Si2+C layer. Carbon precipitates were found to exist in either a disordered or partially ordered (graphitic) state, depending upon their locations from the SiC reaction interface. The NiAl layer showed dramatic contrast difference compared to the Ni3Al and Ni5.4Al1Si2 layers, and was bounded by the Ni3Al/NiAl and NiAl/Ni5.4A1lSi2 phase boundaries. The kinetics of the NiAl formation was limited by diffusion, and the growth rate constant was measured to be 2 × 10−10cm2/s. The thickness of the reaction zone on the Ni3Al side was always greater than that on the SiC side, suggesting that the decomposition of the SiC may be a rate limiting step for the SiC/Ni3Al reactions. An Al-rejection model, based on a lower solid solubility of Al in the Ni-Al-Si ternary phase than in the Ni3A1 intermetallic compound, is proposed to explain the formation of NiAl phase. The rate limiting step for the Ni3Al/SiC reactions is discussed in light of discontinuous decomposition of SiC, which leads to the formation of alternating C and Ni(5 4−x)Al1Si2 layers in the reaction zone. Preliminary results on C precipitation behavior in NiAl/SiC system are reported.

Solid state reactions of SiC with Co, Ni, and Pt

1991 ◽  
Vol 6 (4) ◽  
pp. 796-809 ◽  
Author(s):  
T.C. Chou ◽  
A. Joshi ◽  
J. Wadsworth
Keyword(s):  
Solid State ◽  
Solid State Reactions ◽  
Dendritic Microstructure ◽  
Sic Ceramics ◽  
Rate Limiting Step ◽  
Metal Silicides ◽  
Metal Ceramic ◽  
Reaction Zones ◽  
Ceramic Interfaces ◽  
Rate Limiting

Solid state reactions between SiC ceramics and Co, Ni, and Pt metals have been studied at temperatures between 800 and 1200 °C for various times under He or vacuum conditions. Reactions between the metals and SiC were extensive above 900 °C. Various metal silicides and carbon precipitates were formed in layered reaction zones. Interfacial melting was also observed at certain temperatures; teardrop-shaped reaction zones, porosity, and dendritic microstructure resulting from melting/solidification were evident. The metal/ceramic interfaces exhibited either planar or nonplanar morphologies, depending upon the nature of the metal/ceramic reactions. Concave interfacial contours were observed when interfacial melting occurred. By contrast, planar interfaces were observed in the absence of interfacial melting. In all cases, the decomposition of SiC was sluggish and may serve as a rate limiting step for metal/ceramic reactions. Free unreacted carbon precipitates were formed in all the reaction zones and the precipitation behavior was dependent upon the metal system as well as the location with respect to the SiC reaction interface. Modulated carbon bands, randomly scattered carbon precipitates, and/or carbon-denuded bands were formed in many of the reaction zones, and the carbon existed in a mixed state containing both amorphous and graphitic forms.

Sex effects on fat hardness meter readings of market weight pigs

1995 ◽  
Vol 75 (4) ◽  
pp. 509-515 ◽  
Author(s):  
A. P. Sather ◽  
S. D. M. Jones ◽  
W. M. Robertson ◽  
Sophie Zawadski
Keyword(s):  
Growth Rate ◽  
Growth Rate Constant ◽  
Quadratic Term ◽  
Cross Sectional ◽  
Linear Interaction ◽  
Fat Quality ◽  
Lean Growth ◽  
Fat Thickness ◽  
Selection For ◽  
Sectional Surface

A portable fat hardness meter (FHM) was used to measure the firmness of the inner fat layer on a cross sectional surface over the second thoracic vertebra of pork carcasses. This was a 4-yr study with data collected on 141 barrows, 214 gilts and 270 boars. A statistical model, after adjusting for year and breed of sire (i.e., Lacombe, Landrace, Yorkshire), included sex, linear and quadratic covariates for carcass growth rate (i.e., carcass weight per day of age), a linear covariate for leanness (i.e., carcass fat thickness or dissectible lean) within sex, and a linear by linear covariate of growth rate by leanness, and was used to describe a response surface with fat hardness. No pigs in this study had extremely soft fat (i.e., FHM < 420). However, 4, 2 and 0% of the boars, gilts and barrows had very soft fat (i.e., FHM 420–619). While 10% of the barrows had extremely hard (i.e., FHM > 970) or very hard fat (i.e., FHM 930–970), only 1% of the gilts had very hard fat, and no boars were included in these classes. Relative to the FHM readings of gilts (i.e., 805 ± 6.2), boars (i.e., 780 ± 5.6) had softer fat (P = 0.0002) while barrows (i.e., 835 ± 7.4) had harder fat (P = 0.0001). The majority of boars had slightly soft fat (i.e., FHM 750–829) while gilts and barrows had slightly hard (i.e., FHM 830–889) fat. Regression coefficients for growth rate on fat hardness were homogeneous among the sexes. As growth rate increased fat hardness increased, but was attenuated by a negative quadratic term. Increased leanness was linearly antagonistically related with fat hardness. There were differential effects across sexes (P = 0.0261). As leanness increased, fat became softer among boars and gilts compared with barrows. A linear by linear interaction of growth rate with leanness attenuated this effect. Holding growth rate constant, a 25% reduction of carcass fatness would be expected to reduce fat hardness by 40, 35 and 20 points in boars, gilts, and barrows, respectively. While selection for increased lean growth may result in some degradation in fat quality, the trend towards marketing heavy pigs as they become leaner should be sufficient to offset this effect. Key words: Swine, carcass, grading, growth rate, fat, lean

The Structure of Spinel/Oxide Reaction Fronts During Spinel-Forming Solid State Reactions

1994 ◽  
Vol 357 ◽  
Author(s):  
D. Hesse ◽  
R. Scholz ◽  
S. Senz ◽  
H. Sieber ◽  
P. Werner ◽  
...  
Keyword(s):  
Solid State ◽  
Reaction Front ◽  
Lattice Misfit ◽  
Solid State Reactions ◽  
Interface Plane ◽  
Misfit Dislocations ◽  
Spinel Oxide ◽  
Oxygen Sublattice ◽  
Cross Sectional ◽  
Reaction Fronts

AbstractA series of spinels were grown by topotaxial solid state reaction on MgO(001) and sapphire(11.2) substrates. The structure of the various spinel/oxide reaction fronts was investigated by cross-sectional high resolution electron microscopy and other methods. While for extremely low misfit the reaction front is completely coherent, different interfacial defects form in other cases, depending on sign and amount of the spinel/oxide lattice misfit. For a large positive misfit, a network of misfit dislocations occured all running along <100<, with Burgers vectors of types a/2[101] and a/2[011] pointing out of the interface. The perpendicular Burgers vector component along [001] permits these dislocations to glide in order to cope with the advancing reaction front, avoiding kinetically unfavourable climb processes. The latter have, however, been observed in negative misfit, where the interfacial dislocations run along <110>, with their Burgers vectors lying in the interface plane. At the sapphire/MgAl2O4 front the structure is completely different. Here the h.c.p.-type oxygen sublattice of sapphire is reconstructed into the f.c.c-type oxygen sublattice of the spinel, which requires a tilt of the MgAl2O4 lattice and the formation of interfacial ledges.

Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
T. Sawada ◽  
W. X. Chen ◽  
E. D. Marshall ◽  
K. L. Kavanagh ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shallow Junctions

ABSTRACTAlloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Silicide Formation Reactions in a-Si/Co Multilayered Samples

2008 ◽  
Vol 277 ◽  
pp. 3-8
Author(s):  
Z. Balogh ◽  
Csaba Cserháti ◽  
Z. Erdélyi ◽  
A. Csik ◽  
G.A. Langer ◽  
...  
Keyword(s):  
Growth Rate ◽  
Solid State ◽  
Synchrotron Radiation ◽  
Magnetron Sputtering ◽  
Interface Reaction ◽  
Solid State Reactions ◽  
Silicide Formation ◽  
Parabolic Kinetics ◽  
Heat Treated ◽  
Interface Reaction Control

Solid state reactions between amorpous Si and crystalline Co have been investigated by synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523 and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65 while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573 and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These results, together with the results of resistance kinetics measurements, in similar multilayered as well as bi-layered samples at similar temperatures, providing similar exponents will be presented. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the interpretation of solid state reactions with non-parabolic kinetics on the nanoscale) will be discussed.

In-Situ Annealing Transmission Electron Microscopy Study of Pd/Ge/Pd/GaAs Interfacial Reactions

1999 ◽  
Vol 589 ◽  
Author(s):  
F. Radulescu ◽  
J.M. Mccarthy ◽  
E. A. Stach
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Epitaxial Growth ◽  
Ohmic Contact ◽  
Ion Beam ◽  
Solid State Reactions ◽  
Cross Sectional ◽  
Transmission Electron

AbstractIn-situ TEM annealing experiments on the Pd (20 nm) / a-Ge (150 nm) / Pd (50 nm) GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. As-deposited cross-sectional samples of equal thickness were prepared using a focused ion beam (FIB) method and then subjected to in-situ annealing at temperatures between 130-400 °C. Excluding Pd-GaAs interactions, four sequential solid state reactions were observed during annealing of the Pd:Ge thin films. First, interdiffusion of the Pd and Ge layers occurred, followed by formation of the hexagonal Pd2Ge phase. This hexagonal phase then transformed into orthorhombic PdGe, followed by solid state epitaxial growth of Ge at the contact / GaAs interface. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape observations. These data agreed with a previous study that measured the activation energies through a differential scanning calorimetry (DSC) method. We established that the Ge transport to the GaAs interface was dependent upon the grain size of the PdGe phase. The nucleation and growth of this phase was demonstrated to have a significant effect on the solid phase epitaxial growth of Ge on GaAs. These findings allowed us to engineer an improved two step annealing procedure that would control the shape and size of the PdGe grains. Based on these results, we have established the suitability of combining FIB sample preparation with in-situ cross-sectional transmission electron microscopy (TEM) annealing for studying thin film solid-state reactions.

Kinetics of Metallic Glass Formation by Solid State Reactions

1985 ◽  
Vol 57 ◽  
Author(s):  
K. Samwer ◽  
H Schröder ◽  
M. Moske
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Metallic Glass ◽  
Glass Formation ◽  
Amorphous Layer ◽  
Solid State Reactions ◽  
Diffusion Couples ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Kinetics Of

AbstractMetallic glass formation by solid state reactions has been observed in multilayer Zr-Co diffusion couples. The kinetics of the reaction are limited by the diffusion of the Co-atoms in the growing amorphous layer, at least for longer times, as shown by cross-sectional transmission electron microscopy and resistance measurements. The latter one provides the interdiffusion constant and the activation energy of about 1.1 eV. Deposition of the crystalline layers at 77 K results in an enhanced amorphization process in the first stage of the reaction and gives preliminary answers about the nucleation of the amorphous phase.

Microstructural Characterization Of The Pd-Ge Ohmic Contact On Gaas By Cross-Sectional Transmission Electron Microscopy (Tem)

1999 ◽  
Vol 5 (S2) ◽  
pp. 158-159
Author(s):  
F. Radulescu ◽  
J.M. McCarthy
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Gaas Substrate ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Solid State Reactions ◽  
Specimen Preparation ◽  
Cross Sectional ◽  
Metal Thin Films

In the last decade, Pd-Ge contact system emerged as the most promising replacement of the Au-Ni-Ge alloy, still used by most of today's GaAs technology. Its better electrical properties stem from the fact that contact formation is based on a series of solid state reactions without any melting of the metal thin films and the GaAs substrate taking place during annealing. Research studies by E.D. Marshall et al. (1) demonstrated that thermally stable contacts with low resistivities could be achieved by low temperature annealing of Pd and Ge thin films. Their studies also revealed that the excess Ge is regrown on top of the GaAs substrate by a solid state epitaxy mechanism.Typical TEM cross-sectional specimen preparation techniques limit the electron transparent area and make the global characterization of the contact difficult. In this study, we employed a focus ion beam (FEB) method as described by Bassile et al.(2), which allowed us to observe a minimum of 4 microns of the interface cross section in each of the specimens examined.

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