Boron Segregation and Out-diffusion in Single-Crystal Si 1-y C y

2003 ◽  
Vol 765 ◽  
Author(s):  
E. J. Stewart ◽  
J.C. Sturm
Keyword(s):  
Diffusion Process ◽  
Single Crystal ◽  
Carbon Diffusion ◽  
Subsequent Oxidation ◽  
Boron Segregation ◽  
Carbon Precipitation

AbstractBoron segregation and its effect on carbon diffusion is studied in single-crystal Si1-yCy. We find that boron segregates from silicon to Si0.996C0.004 at a level m=[B]SiC/[B]Si = 1.7 during a 2 hour, 850°Cannealin N2. After this anneal, if most of the carbon is then removed from the Si1-yCy layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N2 anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.

Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al2O3Substrates

2013 ◽  
Vol 52 (11R) ◽  
pp. 110122 ◽  
Author(s):  
Shuichi Ogawa ◽  
Takatoshi Yamada ◽  
Shinji Ishidzuka ◽  
Akitaka Yoshigoe ◽  
Masataka Hasegawa ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Carbon Diffusion ◽  
Graphene Growth ◽  
Vacuum Heating

EPITAXIAL GROWTH OF SiO2 ON Mo(112)

2000 ◽  
Vol 07 (01n02) ◽  
pp. 7-14 ◽  
Author(s):  
T. SCHROEDER ◽  
M. ADELT ◽  
B. RICHTER ◽  
M. NASCHITZKI ◽  
M. BÄUMER ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
High Contrast ◽  
Silicon Deposition ◽  
Final Annealing ◽  
Subsequent Oxidation ◽  
Control Film ◽  
Annealing Procedure ◽  
First Time

A new preparation is reported which, for the first time, results in a thin, crystalline SiO2 film on a Mo(112) single crystal. The procedure consists of repeated cycles of silicon deposition and subsequent oxidation, followed by a final annealing procedure. AES and XPS have been used to control film stoichiometry. LEED pictures of high contrast show a hexagonal, crystalline SiO2 overlayer with a commensurate relationship to the Mo(112) substrate. The wetting of the substrate by the film has been investigated by LEED, XPS and TDS, revealing that the film covers the substrate completely.

Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation

1999 ◽  
Vol 38 (Part 2, No. 3A) ◽  
pp. L223-L225 ◽  
Author(s):  
Toshinori Taishi ◽  
Xinming Huang ◽  
Masayoshi Kubota ◽  
Tomio Kajigaya ◽  
Tatsuo Fukami ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Boron Segregation ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Effect of Interactions Among Elements on Diffusion Process Associated with γ′ Coarsening in a Ni-Based Single-Crystal Superalloy

2020 ◽  
Vol 33 (7) ◽  
pp. 1013-1020
Author(s):  
Guang-Lei Wang ◽  
Dong-Qing Qi ◽  
Ji-De Liu ◽  
Jin-Lai Liu ◽  
Yi-Zhou Zhou ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Single Crystal ◽  
Single Crystal Superalloy

Enhanced Carbon Diffusion in Silicon During 900°0 Annealing

1984 ◽  
Vol 36 ◽  
Author(s):  
L. A. Ladd ◽  
J. P. Kalejs ◽  
U. Gösele
Keyword(s):  
Diffusion Coefficient ◽  
Surface Oxidation ◽  
Carbon Diffusion ◽  
Sample Surface ◽  
Carbon Accumulation ◽  
Interstitial Oxygen ◽  
Enhanced Diffusion ◽  
Carbon Precipitation ◽  
High Concentrations

ABSTRACTEnhanced diffusion of carbon Is observed to be produced during anneal ing of silicon at 900°C under conditions of surface oxidation and phosphorus in-diffusion. Silicon containing high concentrations of carbon (∼9 × 1017/cm3 substitutional) and varying levels of interstitial oxygen and differing defect concentrations has been studied. Diffusion coefficient enhancement over the value found for an anneal in an inert ambient is by a factor of three during oxidation and a factor of forty with phosphorus in-diffusion. Carbon accumulation takes place in a region 0.3–0.5 microns from the sample surface only under conditions of phosphorus in-diffusion and is attributed to carbon precipitation. A model that assumes Interactions between silicon self-interstitials and the carbon can explain both the enhanced diffusion and the carbon accumulation.

scholarly journals Unexpected Precipitation of a Re-Rich Phase in Single Crystal Superalloy CMSX-4 during Thermal Exposure

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Kuiyu Cheng ◽  
ChangYong Jo ◽  
DooHyun Kim ◽  
Tao Jin ◽  
Zhuangqi Hu
Keyword(s):  
Diffusion Process ◽  
Single Crystal ◽  
Interdendritic Region ◽  
Thermal Exposure ◽  
Dendrite Core ◽  
Single Crystal Superalloy ◽  
Core Formation ◽  
Rich Phase

A Re-rich phase (up to 85.40% wt.Re) was occasionally found in a single crystal superalloy during thermal exposure. Interestingly, this phase is located in front of the dendrite periphery in the interdendritic region, while the Re is segregated in the dendrite core. Formation of this phase was suggested to relate to the unusual accumulation of the Re resulting from the uneven diffusion process of Re. Appearance of this phase may imply the preference of forming Re-Re atomic bond in the superalloys.

Solvent diffusion through a non-porous crystal ‘caught in the act’ and related single-crystal-to-single-crystal transformations in a cationic dinuclear Ag(i) complex

CrystEngComm ◽  
2015 ◽  
Vol 17 (46) ◽  
pp. 8957-8964 ◽  
Author(s):  
Jo Alen ◽  
Luc Van Meervelt ◽  
Wim Dehaen ◽  
Liliana Dobrzańska
Keyword(s):  
Diffusion Process ◽  
Single Crystal ◽  
Crystal Lattice ◽  
Solvent Diffusion ◽  
Solvent Uptake ◽  
Porous Crystal

A few snapshots of a dynamic solvent diffusion process through a seemingly non-porous crystal of a dinuclear, cyclic Ag(i) complex were revealed. These indicate the complexity of the process, which involves not only relocation of the molecules in the crystal lattice, but also conformational adjustments of the metallocycles in response to solvent uptake/release.

scholarly journals Study on abnormal hot corrosion behavior of nickel-based single-crystal superalloy at 900 °C after drilling

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Zehao Chen ◽  
Mengmeng Wu ◽  
Yanling Pei ◽  
Shusuo Li ◽  
Shengkai Gong
Keyword(s):  
Diffusion Process ◽  
Single Crystal ◽  
Oxide Layer ◽  
Corrosion Behavior ◽  
Surface Stress ◽  
Hot Corrosion ◽  
Single Crystal Superalloy ◽  
Alloying Elements ◽  
Stable Oxide ◽  
Change Of Microstructure

AbstractThe hot corrosion behavior of nickel-based single-crystal superalloy after drilling is investigated at 900 °C. The characteristics of hot corrosion after drilling which are different from normal hot corrosion are reflected in the formation of a more stable oxide layer and less severe spallation. The change of microstructure around the hole is the main reason for the formation of a stable oxide layer during hot corrosion by changing the diffusion process of alloying elements. Subsequently, the formation of a stable oxide layer can reduce the effect of spalling by optimizing surface stress.

The Diffusion Process of Methane through a Silicalite Single Crystal Membrane

2002 ◽  
Vol 106 (20) ◽  
pp. 5163-5168 ◽  
Author(s):  
M. Goktug Ahunbay ◽  
J. Richard Elliott ◽  
Orhan Talu
Keyword(s):  
Diffusion Process ◽  
Single Crystal
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