Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)]

2005 ◽  
Vol 86 (1) ◽  
pp. 016102
Author(s):  
A. F. M. Anwar ◽  
Syed S. Islam ◽  
Richard T. Webster
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Collapse Mechanism ◽  
Carrier Trapping ◽  
Current Collapse

scholarly journals Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

2012 ◽  
Vol 171-172 ◽  
pp. 1172-1179 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Nynke Vlietstra ◽  
Edsger C.P. Smits ◽  
Mark-Jan Spijkman ◽  
Henrique L. Gomes ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Trapping ◽  
Charge Carrier Trapping

scholarly journals Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

2001 ◽  
Vol 79 (16) ◽  
pp. 2651-2653 ◽  
Author(s):  
G. Simin ◽  
A. Koudymov ◽  
A. Tarakji ◽  
X. Hu ◽  
J. Yang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Collapse ◽  
Strain Mechanism ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors

Nano Letters ◽  
2015 ◽  
Vol 15 (7) ◽  
pp. 4657-4663 ◽  
Author(s):  
Yingjie Zhang ◽  
Qian Chen ◽  
A. Paul Alivisatos ◽  
Miquel Salmeron
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Trapping ◽  
Dynamic Charge ◽  
Charge Carrier Trapping
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