Effect of the interfacial SiO2 layer thickness on the dominant carrier type in leakage currents through HfAlOx∕SiO2 gate dielectric films

2004 ◽  
Vol 85 (25) ◽  
pp. 6227-6229 ◽  
Author(s):  
Wataru Mizubayashi ◽  
Naoki Yasuda ◽  
Hirokazu Hisamatsu ◽  
Kunihiko Iwamoto ◽  
Koji Tominaga ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Gate Dielectric ◽  
Sio2 Layer ◽  
Dielectric Films ◽  
Leakage Currents ◽  
Sio2 Layer Thickness

SiO2 layer thickness effects on the (001) texture of FePtCu:SiO2 nanocomposite films

2010 ◽  
Vol 518 (8) ◽  
pp. 2163-2166 ◽  
Author(s):  
B. Ma ◽  
C.L. Zha ◽  
Z.Z. Zhang ◽  
Q.Y. Jin
Keyword(s):  
Layer Thickness ◽  
Sio2 Layer ◽  
Nanocomposite Films ◽  
Sio2 Layer Thickness

Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET

2001 ◽  
Vol 45 (12) ◽  
pp. 1999-2003 ◽  
Author(s):  
Jau-Yi Wu ◽  
Po-Wen Sze ◽  
Yeong-Her Wang ◽  
Mau-Phon Houng
Keyword(s):  
Temperature Effect ◽  
Gate Dielectric ◽  
Dielectric Films ◽  
Gate Leakage ◽  
Leakage Currents

Influence of SiO2 layer thickness on plasmon enhanced upconversion in hybrid Ag/SiO2/NaYF4:Yb, Er, Gd structures

2013 ◽  
Vol 270 ◽  
pp. 712-717 ◽  
Author(s):  
J. Shen ◽  
Z.Q. Li ◽  
Y.R. Chen ◽  
X.H. Chen ◽  
Y.W. Chen ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Sio2 Layer ◽  
Sio2 Layer Thickness
Sign in / Sign up

Export Citation Format

Share Document