Effects of rapid thermal annealing on quality of In0.52Al0.48As∕In0.53Ga0.47As multiquantum wells grown on a compositionally graded InAlAs∕InAlGaAs metamorphic buffer layer

2004 ◽  
Vol 85 (26) ◽  
pp. 6335-6337 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Seong-June Jo ◽  
Jong-In Song
Keyword(s):  
Buffer Layer ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metamorphic Buffer

scholarly journals Gate quality of ex situ deposited Al/SiNx:H/n-In0.53Ga0.47As devices after rapid thermal annealing

1999 ◽  
Vol 14 (7) ◽  
pp. 628-631 ◽  
Author(s):  
M N Blanco ◽  
E Redondo ◽  
I Mártil ◽  
G González-Díaz
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ex Situ

Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

The Effect of Rapid Thermal Annealing on the Quality of Thin Thermal Oxides

ESSDERC ’89 ◽  
1989 ◽  
pp. 345-348
Author(s):  
H. Wendt ◽  
A. Spitzer ◽  
W. Bensch ◽  
K. v. Sichart
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline β-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers

1997 ◽  
Vol 310 (1-2) ◽  
pp. 115-122 ◽  
Author(s):  
D.H. Tassis ◽  
C.A. Dimitriadis ◽  
S. Boultadakis ◽  
J. Arvanitidis ◽  
S. Ves ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Conventional Furnace

MBE Growth of an Epitaxial Insulator-Metal-Semiconductor Structure: CaF2/CoSi2/Si(111)

1985 ◽  
Vol 54 ◽  
Author(s):  
Julia M. Phillips ◽  
W. M. Augustyniak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Semiconductor Structure ◽  
Mbe Growth

ABSTRACTWe report the first successful growth of an epitaxial insulator-metal-semiconductor structure. A layer of metallic CoSi2, followed by a layer of insulating CaF2 have been grown by molecular beam epitaxy on Si(111). The epitaxial quality of the CaF2 layer improves upon rapid thermal annealing, while the already excellent crystallinity of the CoSi2 layer is unaffected. The lattice of the CoSi2 is rotated 180° with respect to the Si lattice while the CaF2 lattice is aligned with the Si lattice.

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