Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing

2016 ◽  
Vol 16 (5) ◽  
pp. 5070-5073
Author(s):  
Myoung Han Yoo ◽  
Nam-Hoon Kim
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Indium Selenide ◽  
Cigs Solar Cells

Characterization of Cuprous Oxide Thin Films for Application in Solar Cells

2019 ◽  
Vol 22 ◽  
pp. 65-73
Author(s):  
Ørnulf Nordseth ◽  
Irinela Chilibon ◽  
Bengt Gunnar Svensson ◽  
Raj Kumar ◽  
Sean Erik Foss ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cuprous Oxide ◽  
Wavelength Region ◽  
Morphological Properties ◽  
Optical Absorption Coefficient ◽  
Sputter Deposited ◽  
Post Deposition

Cuprous oxide (Cu2O) has a high optical absorption coefficient and favourable electrical properties, which make Cu2O thin films attractive for photovoltaic applications. Using reactive radio-frequency magnetron sputtering, high quality Cu2O thin films with good carrier transport properties were prepared. This paper presents the characteristics of Cu2O thin films that were sputter deposited on quartz substrates and subjected to post-deposition rapid thermal annealing. The thickness of the thin films and the optical constants were determined by ellipsometry spectroscopy (SE). The optical transmittance increased in lower wavelength region after annealing at 900 ̊C in rapid thermal annealing (RTA). The structural and morphological properties of the Cu2O thin films were investigated by electronic scanning microscopy (SEM) and atomic force microscopy (AFM), whereas elemental analysis was performed by X-ray fluorescence spectroscopy (XRF). The carrier mobility, carrier density and film resistivity were changed after post-deposition rapid thermal annealing from respectively ~14 cm2/Vs, ~2.3 x 1015 cm-3 and ~193 Ωcm for the as-deposited Cu2O film to ~49 cm2/Vs, ~5.0 x 1014 cm-3 and ~218 Ωcm for the annealed Cu2O film. The investigation suggests that the sputter-deposited Cu2O thin films have good potential for application as absorber layers in solar cells.

Thermal annealing induced physical properties of ZnSe thin films for buffer layer in solar cells

2020 ◽  
Vol 117 ◽  
pp. 113845 ◽  
Author(s):  
S. Chuhadiya ◽  
R. Sharma ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Physical Properties ◽  
Buffer Layer ◽  
Thermal Annealing ◽  
Znse Thin Films

scholarly journals Effects of rapid thermal annealing on the properties of room-temperature oxygenated DC sputtered zinc thin films for CZTS solar cells application

2021 ◽  
Vol 47 (2) ◽  
pp. 637-647
Author(s):  
Emmanuel R Ollotu ◽  
Nuru R Mlyuka ◽  
Margaret E Samiji
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Near Infrared ◽  
Hall Effect Measurement ◽  
Window Layer ◽  
Zno Films

This work investigated the potential to achieve zinc oxide (ZnO) films for Cu2ZnSnS4 (CZTS) solar cells window layer at controlled annealing conditions as a potential approach to address elemental inter-diffusion in CZTS solar cells. This involved rapid thermal annealing (RTA) of room-temperature oxygenated DC sputtered zinc thin films in an ambient of nitrogen gas at different temperatures. Structural, morphological, optical, and electrical properties of these films were determined by X-ray diffractometer, Scanning Electron Microscopy, Ultraviolet-visible-near infrared spectrophotometer, and Hall Effect measurement, respectively. ZnO phases were observed after annealing the films over 150 °C. The films’ grains sizes improved with increasing RTA temperature. An exponential decrease in these films’ resistivity was observed with increasing RTA temperature attaining the lowest value at 300 °C. The bandgap and average solar transmittance of the films increased with increasing RTA temperature achieving values that are potential for applications in CZTS solar cells window layer at RTA temperatures beyond 200 °C. Keywords: Sputtering; Rapid thermal annealing; Zinc oxide; Structural; Opt-electrical

scholarly journals Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

2017 ◽  
Vol 628 ◽  
pp. 1-6 ◽  
Author(s):  
M.A. Olgar ◽  
J. Klaer ◽  
R. Mainz ◽  
L. Ozyuzer ◽  
T. Unold
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films
Sign in / Sign up

Export Citation Format

Share Document