Distance measurements between paramagnetic centers and a planar object by matrix Mims electron nuclear double resonance

2005 ◽  
Vol 122 (2) ◽  
pp. 024515 ◽  
Author(s):  
Paul-Philipp Zänker ◽  
Gunnar Jeschke ◽  
Daniella Goldfarb
1988 ◽  
Vol 21 (2) ◽  
pp. 535-537 ◽  
Author(s):  
Shulamith Schlick ◽  
Lars Sjoqvist ◽  
Anders Lund

1985 ◽  
Vol 46 ◽  
Author(s):  
C.A.J. Ammerlaan ◽  
M. Sprenger ◽  
R. Van Kemp ◽  
D.A. Van Wezep

AbstractThe application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.


1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.


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