Electron nuclear double resonance from paramagnetic centers in ionomers. Titanium(III) in Nafion

1988 ◽  
Vol 21 (2) ◽  
pp. 535-537 ◽  
Author(s):  
Shulamith Schlick ◽  
Lars Sjoqvist ◽  
Anders Lund
Keyword(s):  
Double Resonance ◽  
Paramagnetic Centers ◽  
Electron Nuclear Double Resonance

Defect Identification in Silicon Using Electron Nuclear Double Resonance

1985 ◽  
Vol 46 ◽  
Author(s):  
C.A.J. Ammerlaan ◽  
M. Sprenger ◽  
R. Van Kemp ◽  
D.A. Van Wezep
Keyword(s):  
Electronic Structure ◽  
Point Defects ◽  
Double Resonance ◽  
Paramagnetic Centers ◽  
Electron Nuclear Double Resonance ◽  
Defect Identification ◽  
Vacancy Complex ◽  
Identification And Characterization ◽  
Atomic And Electronic Structure

AbstractThe application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

Sign in / Sign up

Export Citation Format

Share Document