Bragg gratings in silicon-on-insulator waveguides by focused ion beam milling

2004 ◽  
Vol 85 (21) ◽  
pp. 4860-4862 ◽  
Author(s):  
D. J. Moss ◽  
V. G. Ta’eed ◽  
B. J. Eggleton ◽  
D. Freeman ◽  
S. Madden ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Bragg Gratings ◽  
Silicon On Insulator ◽  
Focused Ion Beam Milling

scholarly journals Higher order mode conversion via focused ion beam milled Bragg gratings in Silicon-on-Insulator waveguides

2004 ◽  
Vol 12 (21) ◽  
pp. 5274 ◽  
Author(s):  
V. G. Ta'eed ◽  
D. J. Moss ◽  
B. J. Eggleton ◽  
D. Freeman ◽  
S. Madden ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Mode Conversion ◽  
Ion Beam ◽  
Bragg Gratings ◽  
Higher Order ◽  
Silicon On Insulator ◽  
Order Mode ◽  
Higher Order Mode

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

scholarly journals A streamlined workflow for automated cryo focused ion beam milling

2021 ◽  
pp. 107743
Author(s):  
Sebastian Tacke ◽  
Philipp Erdmann ◽  
Zhexin Wang ◽  
Sven Klumpe ◽  
Michael Grange ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Focused Ion Beam Milling

Addressable Metal-Ferroelectric-Metal Nanocapacitor Arrays Fabricated by Focused Ion Beam Milling

2012 ◽  
Vol 132 (1) ◽  
pp. 99-106
Author(s):  
Ying Dai ◽  
Lei Yang ◽  
Longhai Wang ◽  
Bin Tian ◽  
Lianying Zou ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Focused Ion Beam Milling

A study of angular effects in focused ion beam milling of water ice

2008 ◽  
Vol 18 (9) ◽  
pp. 095010 ◽  
Author(s):  
Jing Fu ◽  
Sanjay B Joshi ◽  
Jeffrey M Catchmark
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Water Ice ◽  
Focused Ion Beam Milling
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