scholarly journals Thermal stability of current gain in InGaP∕GaAsSb∕GaAs double-heterojunction bipolar transistors

2004 ◽  
Vol 85 (19) ◽  
pp. 4505 ◽  
Author(s):  
B. P. Yan ◽  
C. C. Hsu ◽  
X. Q. Wang ◽  
E. S. Yang
Keyword(s):  
Thermal Stability ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Double Heterojunction ◽  
Thermal Stability Of

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

Properties and Effects of Hydrogen in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
S.J. Pearton ◽  
H. Cho ◽  
F. Ren ◽  
J.-I. Chyi ◽  
J. Han ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Residual Hydrogen ◽  
Diffusion Characteristics ◽  
Significant Difference ◽  
Device Structures ◽  
The Status ◽  
The Difference ◽  
Thermal Stability Of

AbstractThe status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mgdoped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

2010 ◽  
Vol 57 (11) ◽  
pp. 2964-2969 ◽  
Author(s):  
Yi-Che Lee ◽  
Yun Zhang ◽  
Hee-Jin Kim ◽  
Suk Choi ◽  
Zachary Lochner ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
High Current ◽  
Double Heterojunction ◽  
Direct Growth

Novel Multi-Finger Power HBTs with Non-Uniform Segmented Emitter for Thermal Stability Enhancement

2012 ◽  
Vol 229-231 ◽  
pp. 832-836 ◽  
Author(s):  
D.Y. Jin ◽  
D. Lu ◽  
W.R. Zhang ◽  
Q. Fu ◽  
Y.J. Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Heterojunction Bipolar Transistors ◽  
Heat Dissipation ◽  
Current Density Distribution ◽  
Bipolar Transistors ◽  
Electrical Model ◽  
Collector Current ◽  
The Difference ◽  
Stability Enhancement ◽  
Thermal Stability Of

With the aid of a two-dimensional thermal-electrical model, the thermal stability of multi-finger power heterojunction bipolar transistors (HBTs) with uniform segmented emitter, and non-uniform segmented emitter are studied. It shows that both of them could lower the peak temperature and improve the non-uniformity of the collector current density distribution, and thus improve the thermal stability, compared with an HBT which has traditional non-segmented emitter structure. At the same time, the improvement capability of thermal stability for HBT with non-uniform segmented emitter is superior to that of HBT with uniform segmented emitter, ascribing to selectively divide the emitter fingers into various segments according to the difference of heat dissipation capability in emitter fingers. Furthermore, the improvement capability of thermal stability for HBT with non-uniform segmented emitter is enhanced exponentially as segment spacing increases. However, for HBT with uniform segmented emitter, the ability is less sensitive to the increasing of the segment spacing as it exceeds 6μm. Therefore, the technique of non-uniform segmented emitter is a better method for enhancing the thermal stability of power HBTs.

Characteristics of μc-Si:H for Si Heterojunction Bipolar Transistors

1989 ◽  
Vol 164 ◽  
Author(s):  
H. Fujioka ◽  
M. Ito ◽  
K. Takasaki
Keyword(s):  
Thermal Stability ◽  
Hydrogen Concentration ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doping ◽  
Thermally Stable ◽  
Fluorine Doping ◽  
Hydrogen Atoms ◽  
Thermal Stability Of ◽  
Crystalline Growth

AbstractTo improve the thermal stability of the Si heterojunction bipolar transistors (HBTs), we studied the effect of carbon and fluorine doping on μc-Si:H characteristics. We found that carbon doping suppresses crystalline growth and increases the hydrogen concentration in the film, and that fluorine atoms are more thermally stable than hydrogen atoms. We confirmed that carbon or fluorine doping is promising for use with the μc-Si:H HBT.

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