scholarly journals Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate

2004 ◽  
Vol 96 (12) ◽  
pp. 7108-7111 ◽  
Author(s):  
Z. X. Mei ◽  
Y. Wang ◽  
X. L. Du ◽  
M. J. Ying ◽  
Z. Q. Zeng ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Oxygen Radical ◽  
Controlled Growth

scholarly journals Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate

2005 ◽  
Vol 86 (11) ◽  
pp. 112111 ◽  
Author(s):  
Z. X. Mei ◽  
X. L. Du ◽  
Y. Wang ◽  
M. J. Ying ◽  
Z. Q. Zeng ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Controlled Growth

Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate

2016 ◽  
Vol 122 (11) ◽  
Author(s):  
Haibo Fan ◽  
Mingzi Wang ◽  
Zhou Yang ◽  
Xianpei Ren ◽  
Mingli Yin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Optical And Electrical Properties ◽  
High Quality

Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

2002 ◽  
Vol 81 (4) ◽  
pp. 652-654 ◽  
Author(s):  
T. Onuma ◽  
S. F. Chichibu ◽  
T. Sota ◽  
K. Asai ◽  
S. Sumiya ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate

2006 ◽  
Vol 88 (25) ◽  
pp. 251910 ◽  
Author(s):  
Keshu Wan ◽  
Alessandro Alan Porporati ◽  
Gan Feng ◽  
Hui Yang ◽  
Giuseppe Pezzotti
Keyword(s):  
Band Gap ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Biaxial Stress ◽  
Stress Dependence

Optical band gap of h-BN epitaxial film grown on c -plane sapphire substrate

2010 ◽  
Vol 7 (7-8) ◽  
pp. 1906-1908 ◽  
Author(s):  
Yasuyuki Kobayashi ◽  
Chiun-Lung Tsai ◽  
Tetsuya Akasaka
Keyword(s):  
Band Gap ◽  
Sapphire Substrate ◽  
Optical Band Gap ◽  
Epitaxial Film

AlN gradient interlayer design for the growth of high-quality AlN epitaxial film on sputtered AlN/sapphire substrate

CrystEngComm ◽  
2018 ◽  
Vol 20 (41) ◽  
pp. 6557-6564 ◽  
Author(s):  
Bo Tan ◽  
Jiahui Hu ◽  
Jun Zhang ◽  
Yi Zhang ◽  
Hanling Long ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Epitaxial Film ◽  
High Quality ◽  
Sapphire Substrates ◽  
Novel Method

In this study, we proposed a novel method to grow high-quality AlN films on sputtered AlN/sapphire substrates by designing an AlN gradient interlayer (GIL-AlN).

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