Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate

2006 ◽  
Vol 88 (25) ◽  
pp. 251910 ◽  
Author(s):  
Keshu Wan ◽  
Alessandro Alan Porporati ◽  
Gan Feng ◽  
Hui Yang ◽  
Giuseppe Pezzotti
Keyword(s):  
Band Gap ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Biaxial Stress ◽  
Stress Dependence

Optical band gap of h-BN epitaxial film grown on c -plane sapphire substrate

2010 ◽  
Vol 7 (7-8) ◽  
pp. 1906-1908 ◽  
Author(s):  
Yasuyuki Kobayashi ◽  
Chiun-Lung Tsai ◽  
Tetsuya Akasaka
Keyword(s):  
Band Gap ◽  
Sapphire Substrate ◽  
Optical Band Gap ◽  
Epitaxial Film

scholarly journals Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 698
Author(s):  
Wenwang Wei ◽  
Yi Peng ◽  
Jiabin Wang ◽  
Muhammad Farooq Saleem ◽  
Wen Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Compressive Stress ◽  
Sapphire Substrate ◽  
Light Transmission ◽  
Chemical Vapor ◽  
Biaxial Stress ◽  
X Ray Diffraction ◽  
Patterned Sapphire Substrate ◽  
Transmission Electron ◽  
Nano Patterning

AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80–300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (Eg) and optical constants (n, k) with temperature are discussed in detail. Nano-patterning leads to poor light transmission due to light scattering, coupling, and trapping in nano-holes.

Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate

2016 ◽  
Vol 122 (11) ◽  
Author(s):  
Haibo Fan ◽  
Mingzi Wang ◽  
Zhou Yang ◽  
Xianpei Ren ◽  
Mingli Yin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Optical And Electrical Properties ◽  
High Quality

Band Gap Shift of GaN under Uniaxial Strain Compression

2001 ◽  
Vol 693 ◽  
Author(s):  
H. Y. Peng ◽  
M. D. McCluskey ◽  
Y. M. Gupta ◽  
M. Kneissl ◽  
N. M. Johnson
Keyword(s):  
Shock Wave ◽  
Hydrostatic Pressure ◽  
Band Gap ◽  
Uniaxial Strain ◽  
Biaxial Stress ◽  
Time Dependent ◽  
Time Resolved ◽  
Piezoelectric Field ◽  
Slow Band ◽  
Absorption Measurements

AbstractThe band-gap shift of GaN:Mg epilayers on (0001)-oriented sapphire was studied as a function of uniaxial strain compression along the c-axis using time-resolved, optical absorption measurements in shock wave experiments. For longitudinal stresses ranging from 4 to 14 GPa, the band gap shift is approximately 0.026 eV/GPa. Combining this result with the known behavior of wurtzite GaN under hydrostatic pressure and biaxial stress, a new set of deformation potentials has been estimated: acz-D1 = -10.2 eV, act-D2 = -7.9 eV, D3 = 1.33 eV and D4 = -0.74 eV. A slow band gap shift is also observed following the immediate band gap increase upon impact. This phenomenon can be explained by a time-dependent screening of the piezoelectric field.

Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry

2007 ◽  
Vol 300 (1) ◽  
pp. 194-198 ◽  
Author(s):  
J.J. Harris ◽  
R. Thomson ◽  
C. Taylor ◽  
D. Barlett ◽  
R.P. Campion ◽  
...  
Keyword(s):  
Band Gap ◽  
Sapphire Substrate ◽  
Substrate Heating

Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

2001 ◽  
Vol 222 (1-2) ◽  
pp. 96-103 ◽  
Author(s):  
H.Z. Xu ◽  
A. Bell ◽  
Z.G. Wang ◽  
Y. Okada ◽  
M. Kawabe ◽  
...  
Keyword(s):  
Band Gap ◽  
Sapphire Substrate ◽  
Yellow Luminescence

Stress Effects on As Activation in Si

2007 ◽  
Vol 994 ◽  
Author(s):  
Chihak Ahn ◽  
Scott T Dunham
Keyword(s):  
Density Functional Theory ◽  
Tensile Stress ◽  
Density Functional ◽  
Formation Energy ◽  
Biaxial Stress ◽  
Lattice Expansion ◽  
Stress Dependence ◽  
Functional Theory ◽  
Minimal Impact ◽  
Stress Effects

AbstractWe studied stress effects on As activation in silicon using density functional theory. Based on lattice expansion coefficient, we calculated formation energy change due to applied stress and plotted the stress dependence of AsmV concentration. We found that biaxial stress results in minimal impact on As activation, which is consistent with experimental observation by Sugii et al. [J. Appl. Phys. 96, 261 (2004)], who found no significant change in As activation under tensile stress.

Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

2002 ◽  
Vol 81 (4) ◽  
pp. 652-654 ◽  
Author(s):  
T. Onuma ◽  
S. F. Chichibu ◽  
T. Sota ◽  
K. Asai ◽  
S. Sumiya ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

scholarly journals Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate

2005 ◽  
Vol 86 (11) ◽  
pp. 112111 ◽  
Author(s):  
Z. X. Mei ◽  
X. L. Du ◽  
Y. Wang ◽  
M. J. Ying ◽  
Z. Q. Zeng ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Controlled Growth
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