Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

2002 ◽  
Vol 81 (4) ◽  
pp. 652-654 ◽  
Author(s):  
T. Onuma ◽  
S. F. Chichibu ◽  
T. Sota ◽  
K. Asai ◽  
S. Sumiya ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

1997 ◽  
Vol 36 (Part 1, No. 6A) ◽  
pp. 3381-3384 ◽  
Author(s):  
Masaya Shimizu ◽  
Yasutoshi Kawaguchi ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

2018 ◽  
Vol 482 ◽  
pp. 1-8 ◽  
Author(s):  
Xu Yang ◽  
Shugo Nitta ◽  
Kentaro Nagamatsu ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Hexagonal Boron Nitride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Pulsed Mode

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

scholarly journals High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

1998 ◽  
Vol 73 (9) ◽  
pp. 1278-1280 ◽  
Author(s):  
S. Haffouz ◽  
H. Lahrèche ◽  
P. Vennéguès ◽  
P. de Mierry ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Mode ◽  
Sapphire Surface ◽  
N Treatment

Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

1999 ◽  
Vol 595 ◽  
Author(s):  
Hideto Miyake ◽  
Motoo Yamaguchi ◽  
Masahiro Haino ◽  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Catalytic Effect ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Severe Damage ◽  
Metal Mask ◽  
Lateral Overgrowth ◽  
Window Region

AbstractA buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 °C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window = 2/2 νm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure.

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