Low-Temperature Annealing of Irradiation-Induced Defects in LiF

1959 ◽  
Vol 116 (5) ◽  
pp. 1069-1080 ◽  
Author(s):  
D. A. Wiegand ◽  
R. Smoluchowski
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low temperature annealing of electron irradiation induced defects in 4H-SiC

2004 ◽  
Vol 85 (17) ◽  
pp. 3780-3782 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Lorenzo Rigutti ◽  
Filippo Nava
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low temperature anneal of electron irradiation induced defects in p type silicon

1998 ◽  
Vol 14 (12) ◽  
pp. 1295-1298 ◽  
Author(s):  
M.-A. Trauwaert ◽  
J. Vanhellemont ◽  
H. E. Maes ◽  
A.-M. Van Bavel ◽  
G. Langouche
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Type Silicon ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low-temperature irradiation-induced defects inp-type germanium

2010 ◽  
Vol 81 (3) ◽  
Author(s):  
Vl. Kolkovsky ◽  
M. Christian Petersen ◽  
A. Mesli ◽  
A. Nylandsted Larsen
Keyword(s):  
Low Temperature ◽  
Temperature Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low temperature annealing of neutron and gamma induced defects in KBr

1968 ◽  
Vol 6 (12) ◽  
pp. 893-897 ◽  
Author(s):  
P.R. Hanley ◽  
A.W. Haberl ◽  
A. Taylor
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Induced Defects

In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide

2019 ◽  
Vol 48 (6) ◽  
pp. 3849-3853
Author(s):  
S. M. Tunhuma ◽  
F. D. Auret ◽  
H. T. Danga ◽  
J. M. Nel ◽  
M. M. Diale
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
In Situ Study ◽  
Temperature Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects

Radiative Recombination in the Cu(In,Ga)Se2 Thin Films Irradiated with Hydrogen Ions

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940033
Author(s):  
O. Borodavchenko ◽  
V. Zhivulko ◽  
M. Yakushev ◽  
M. Sulimov
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Solid Solutions ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Hydrogen Ions ◽  
Photoluminescence Excitation ◽  
Photoluminescence Spectra ◽  
Induced Defects ◽  
Irradiation Induced Defects

The irradiation-induced effects in Cu(In,Ca)Se2 thin films after irradiation with hydrogen ions with dose of [Formula: see text][Formula: see text]cm[Formula: see text] and different energies in the range of 2.5–10[Formula: see text]keV were studied. Irradiated and nonirradiated thin films were investigated by low-temperature (4.2[Formula: see text]K) photoluminescence and photoluminescence excitation methods. The appearance of intense bands at [Formula: see text][Formula: see text]eV and 0.77[Formula: see text]eV in the photoluminescence spectra may be related to radiative recombination on the irradiation-induced defects with deep energy levels in the bandgap of Cu(In,Ca)Se2 solid solutions. A possible nature of these defects and process of radiative recombination are discussed.

Low-temperature annealing of radiation-induced defects in carbon nanotube bundles

2017 ◽  
Vol 80 ◽  
pp. 113-117 ◽  
Author(s):  
B.A. Danilchenko ◽  
E.A. Voitsihovska ◽  
I.S. Rogutski ◽  
R.M. Rudenko ◽  
I.Y. Uvarova ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Temperature ◽  
Nanotube Bundles ◽  
Low Temperature Annealing ◽  
Radiation Induced ◽  
Induced Defects

Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects

2007 ◽  
Vol 41 (8) ◽  
pp. 979-983 ◽  
Author(s):  
A. M. Ivanov ◽  
N. B. Strokan ◽  
A. V. Sadokhin ◽  
A. A. Lebedev
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Radiation Induced ◽  
Induced Defects
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