Electron irradiation‐activated low‐temperature annealing of phosphorus‐implanted silicon

1986 ◽  
Vol 48 (17) ◽  
pp. 1132-1134 ◽  
Author(s):  
M. Miyao ◽  
A. Polman ◽  
W. Sinke ◽  
F. W. Saris ◽  
R. van Kemp
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing

Low temperature annealing of electron irradiation induced defects in 4H-SiC

2004 ◽  
Vol 85 (17) ◽  
pp. 3780-3782 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Lorenzo Rigutti ◽  
Filippo Nava
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing ◽  
Induced Defects ◽  
Irradiation Induced Defects

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC

2006 ◽  
Vol 99 (3) ◽  
pp. 033701 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
L. Rigutti ◽  
S. Pizzini ◽  
A. Le Donne ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Diffusion Length ◽  
Deep Levels ◽  
Spectroscopy Analysis ◽  
Low Temperature Annealing

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

scholarly journals Effects of equal channel angular pressing and heat treatments on the microstructures and mechanical properties of selective laser melted and cast AlSi10Mg alloys

2021 ◽  
Vol 21 (3) ◽  
Author(s):  
Przemysław Snopiński ◽  
Mariusz Król ◽  
Marek Pagáč ◽  
Jana Petrů ◽  
Jiří Hajnyš ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Equal Channel Angular Pressing ◽  
Heat Treatments ◽  
Electron Backscattered Diffraction ◽  
Angular Pressing ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Before And After ◽  
The Impact

AbstractThis study investigated the impact of the equal channel angular pressing (ECAP) combined with heat treatments on the microstructure and mechanical properties of AlSi10Mg alloys fabricated via selective laser melting (SLM) and gravity casting. Special attention was directed towards determining the effect of post-fabrication heat treatments on the microstructural evolution of AlSi10Mg alloy fabricated using two different routes. Three initial alloy conditions were considered prior to ECAP deformation: (1) as-cast in solution treated (T4) condition, (2) SLM in T4 condition, (3) SLM subjected to low-temperature annealing. Light microscopy, transmission electron microscopy, X-ray diffraction line broadening analysis, and electron backscattered diffraction analysis were used to characterize the microstructures before and after ECAP. The results indicated that SLM followed by low-temperature annealing led to superior mechanical properties, relative to the two other conditions. Microscopic analyses revealed that the partial-cellular structure contributed to strong work hardening. This behavior enhanced the material’s strength because of the enhanced accumulation of geometrically necessary dislocations during ECAP deformation.

Improving the Performance of Green LEDs by Low-Temperature Annealing of p-GaN with PdZn

2009 ◽  
Vol 12 (5) ◽  
pp. H185 ◽  
Author(s):  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Seong-Ju Park ◽  
Sunwoon Kim ◽  
Je Won Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Green Leds
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