Plasma deposition of low dielectric constant (k=2.2∼2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

2004 ◽  
Vol 96 (11) ◽  
pp. 6679-6684 ◽  
Author(s):  
Jun Liu ◽  
Kian Ping Loh ◽  
Ming Lin ◽  
Yong Lim Foo ◽  
Wei De Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Boron Nitride ◽  
Plasma Deposition ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Nanoporous Films

Evaluation of Lpcvd Boron Nitride as a Low Dielectric Constant Material

1996 ◽  
Vol 427 ◽  
Author(s):  
R. A. Levy ◽  
M. Narayan ◽  
M. Z. Karim ◽  
S. T. Hsu
Keyword(s):  
Dielectric Constant ◽  
Boron Nitride ◽  
Flow Rate ◽  
Chemical Properties ◽  
Low Dielectric Constant ◽  
Processing Conditions ◽  
Low Dielectric ◽  
Rate Ratios ◽  
And Chemical Properties ◽  
Deposition Conditions

AbstractThis study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 400 to 600 °C and various flow rate ratios using triethylamine borane complex (TEAB) and NH3 as precursors. The dielectric constant of these films exhibit values which varied in the range of 2.6 to 3.5 depending on processing conditions. Low dielectric constant values are achieved at film compositions which approached stoichiometry and have minimal carbon content. The variations in the structural, optical, mechanical, and chemical properties of these films as a function of deposition conditions are also discussed.

Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

1999 ◽  
Vol 86 (5) ◽  
pp. 2739-2745 ◽  
Author(s):  
Kazuhiko Endo ◽  
Keisuke Shinoda ◽  
Toru Tatsumi
Keyword(s):  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Plasma Deposition ◽  
Low Dielectric Constant ◽  
Low Dielectric

scholarly journals Anisotropic Thermally Conductive Perfluoroalkoxy Composite with Low Dielectric Constant Fabricated by Aligning Boron Nitride Nanosheets via Hot Pressing

Polymers ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 1638 ◽  
Author(s):  
Xinru Zhang ◽  
Xinzhi Cai ◽  
Xiaoyu Xie ◽  
Changyu Pu ◽  
Xuanzuo Dong ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Property ◽  
Boron Nitride ◽  
Thermal Management ◽  
Hot Pressing ◽  
Heat Dissipation ◽  
Low Dielectric Constant ◽  
Boron Nitride Nanosheets ◽  
Low Dielectric

Thermal management has become a critical challenge in electronics and portable devices. To address this issue, polymer composites with high thermal conductivity (TC) and low dielectric property are urgently needed. In this work, we fabricated perfluoroalkoxy (PFA) composite with high anisotropic TC and low dielectric constant by aligning boron nitride nanosheets (BNNs) via hot pressing. We characterized the thermal stability, microstructure, in-plane and through-plane TCs, heat dissipation capability, and dielectric property of the composites. The results indicate that the BNNs–PFA composites possessed good thermal stability. When the BNNs content was higher than 10 wt %, the BNNs were well layer aligned in the PFA matrix, and the composites showed obvious anisotropic TC. The in-plane TC and through-plane TCs of 30 wt % BNNs–PFA composite were 4.65 and 1.94 W m−1 K−1, respectively. By using the composite in thermal management of high-power LED, we found that alignment of BNNs in composite significantly improves the heat dissipation capability of composite. In addition, the composites exhibited a low dielectric property. This study shows that hot pressing is a facile and low-cost method to fabricate bulk composite with anisotropic TC, which has wide applications in electronic packaging.

Status of β-SiC, Diamond and C-BN Semiconductors; Comparison of a Si Power Fet to a Hypothetical Diamond Fet

1989 ◽  
Vol 162 ◽  
Author(s):  
Richard Koba ◽  
William Russell
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Dielectric Strength ◽  
Wide Bandgap ◽  
Low Dielectric Constant ◽  
Great Promise ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTMonocrystalline β-SiC, diamond and cubic boron nitride (c-BN) are the three ultimate semiconductors. These materials show great promise as active semiconductors for power electronics because of their wide bandgap, the existence of substitutional dopants, their high dielectric strength, their low dielectric constant, and their high thermal conductivity. To illustrate their superiority, a conventional Si.power FET is compared to a theoretical diamond FET. By assuming the diamond FET can operate hotter and at a higher voltage, it is calculated that the diamond FET should deliver up to 35 times more power-to-load than the Si FET.

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