Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

1999 ◽  
Vol 86 (5) ◽  
pp. 2739-2745 ◽  
Author(s):  
Kazuhiko Endo ◽  
Keisuke Shinoda ◽  
Toru Tatsumi
Keyword(s):  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Plasma Deposition ◽  
Low Dielectric Constant ◽  
Low Dielectric

Deposition of Fluorinated Amorphous Carbon Thin Films with Low Dielectric Constant and Thermal Stability

2000 ◽  
Vol 612 ◽  
Author(s):  
Sang-Soo Han ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Stable Condition ◽  
Flow Rate Ratio ◽  
Low Dielectric Constant ◽  
Low Dielectric

AbstractFluorinated amorphous carbon (a-C:F) thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with increasing CF4:CH4 gas flow rate ratio, and then annealed with increasing annealing temperature (100, 200, 300, and 400.). We have found the reduction mechanism of the dielectric constant and the thermally stable condition for the a-C:F films. On the basis of the results, the optimal condition to satisfy both the low dielectric constant and the thermal stability is followed as; the a-C:F films have to have the compatible F content to make a compromise between the two properties; the C-Fx bonding configuration has to exist as a form of C-F2 & C-F3 instead of C-F; The films should be somewhat cross-linked structure.

Modifications of Low Dielectric Constant Fluorinated Amorphous Carbon Films by Multiple Plasma Treatments

2002 ◽  
Vol 149 (7) ◽  
pp. G384 ◽  
Author(s):  
Jia-Min Shieh ◽  
Kou-Chiang Tsai ◽  
Bau-Tong Dai ◽  
Shih-Chin Lee ◽  
Chih-Hung Ying ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Low Dielectric Constant ◽  
Amorphous Carbon Films ◽  
Low Dielectric ◽  
Plasma Treatments

Processing and Characterization of Fluorinated Amorphous Carbon Low-Dielectric-Constant Films

2004 ◽  
Vol 151 (11) ◽  
pp. F276 ◽  
Author(s):  
Hung-Jen Chen ◽  
Shou-Yi Chang ◽  
Hua-Chun Chiue ◽  
Wei-Shun Lai ◽  
Su-Jien Lin
Keyword(s):  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Low Dielectric Constant ◽  
Low Dielectric

Spectroscopic Studies of Low Dielectric Constant Fluorinated Amorphous Carbon Films for Ulsi Integrated Circuits

1998 ◽  
Vol 524 ◽  
Author(s):  
Yanjun Ma ◽  
Hongning Yang ◽  
J. Guo ◽  
C. Sathe ◽  
A. Agui ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Spectroscopic Studies ◽  
Carbon Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
On Chip ◽  
Rc Delay

ABSTRACTPerformance of future generations of integrated circuits will be limited by the RC delay caused by on-chip interconnections. Overcoming this limitation requires the deployment of new high conductivity metals such as copper and low dielectric constant intermetal dielectrics (IMD). Fluorinated amorphous carbon (a-CFx) is a promising candidate for replacing SiO2 as the IMD. In this paper we investigated the structure and electronic properties of a-CFx thin films using high-resolution x-ray absorption, emission, and photoelectron spectroscopy. The composition and local bonding information were obtained and correlated with deposition conditions. The data suggest that the structure of the a-CFx is mostly of carbon rings and CF2 chains cross-linked with C atoms. The effects of growth temperature on the structure and the thermal stability of the film are discussed.

Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1809-1814 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi ◽  
Yoshihisa Matsubara ◽  
Tadahiko Horiuchi
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric ◽  
Carbon Thin Films
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