Terahertz emission from electrically pumped gallium doped silicon devices

2004 ◽  
Vol 85 (17) ◽  
pp. 3660-3662 ◽  
Author(s):  
P.-C. Lv ◽  
R. T. Troeger ◽  
S. Kim ◽  
S. K. Ray ◽  
K. W. Goossen ◽  
...  
Keyword(s):  
Terahertz Emission ◽  
Silicon Devices ◽  
Electrically Pumped ◽  
Doped Silicon

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

2005 ◽  
Vol 98 (10) ◽  
pp. 103511 ◽  
Author(s):  
P.-C. Lv ◽  
X. Zhang ◽  
J. Kolodzey ◽  
M. A. Odnoblyudov ◽  
I. N. Yassievich
Keyword(s):  
Compressive Stress ◽  
Terahertz Emission ◽  
Silicon Devices ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Uniaxial Compressive Stress

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P. -C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Terahertz Emission ◽  
Electrically Pumped

TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON

2004 ◽  
Vol 14 (03) ◽  
pp. 670-675
Author(s):  
R. T. TROEGER ◽  
T. N. ADAM ◽  
S. K. RAY ◽  
P.-C. LV ◽  
S. KIM ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Theoretical Calculations ◽  
Rate Equations ◽  
Line Center ◽  
Spectral Emission ◽  
Terahertz Emission ◽  
Time Resolved ◽  
Silicon Devices ◽  
Terahertz Emitters

In this paper, we report on electrically pumped terahertz emitters based on silicon doped with boron acceptors. At cryogenic temperatures, three narrow spectral emission lines attributed to radiative transitions from p-like excited hydrogenic states to the s-like Γ8 ground state associated with the boron dopants were observed centered around 8 THz. The spectral emission line center frequencies were in remarkable agreement with values reported from absorption measurements and theoretical calculations. The total time-resolved terahertz emission power was found to be up to 31 μW per device facet. We have solved the rate equations describing the populations in the hydrogenic dopant states involved in the emission mechanism and derived expressions for the current pumping and temperature dependence of the emitted terahertz power, yielding excellent agreement with the experimental data. These results suggest that silicon-based terahertz emitters may be fabricated without epitaxial quantum wells. The observed temperature dependence suggests that electric field assisted thermal escape of carriers from upper hydrogenic states may be responsible for lower output powers at higher temperatures.

Modeling of piezo‐Hall effects inn‐doped silicon devices

1993 ◽  
Vol 62 (23) ◽  
pp. 2947-2949 ◽  
Author(s):  
A. Nathan ◽  
T. Manku
Keyword(s):  
Silicon Devices ◽  
Hall Effects ◽  
Doped Silicon

scholarly journals Terahertz emission from lithium doped silicon under continuous wave interband optical excitation

2015 ◽  
Vol 647 ◽  
pp. 012015
Author(s):  
A V Andrianov ◽  
A O Zakhar'in ◽  
R K Zhukavin ◽  
V N Shastin ◽  
N V Abrosimov
Keyword(s):  
Continuous Wave ◽  
Optical Excitation ◽  
Terahertz Emission ◽  
Doped Silicon
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