Modeling of piezo‐Hall effects inn‐doped silicon devices

1993 ◽  
Vol 62 (23) ◽  
pp. 2947-2949 ◽  
Author(s):  
A. Nathan ◽  
T. Manku
Keyword(s):  
Silicon Devices ◽  
Hall Effects ◽  
Doped Silicon

Terahertz emission from electrically pumped gallium doped silicon devices

2004 ◽  
Vol 85 (17) ◽  
pp. 3660-3662 ◽  
Author(s):  
P.-C. Lv ◽  
R. T. Troeger ◽  
S. Kim ◽  
S. K. Ray ◽  
K. W. Goossen ◽  
...  
Keyword(s):  
Terahertz Emission ◽  
Silicon Devices ◽  
Electrically Pumped ◽  
Doped Silicon

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

2005 ◽  
Vol 98 (10) ◽  
pp. 103511 ◽  
Author(s):  
P.-C. Lv ◽  
X. Zhang ◽  
J. Kolodzey ◽  
M. A. Odnoblyudov ◽  
I. N. Yassievich
Keyword(s):  
Compressive Stress ◽  
Terahertz Emission ◽  
Silicon Devices ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Uniaxial Compressive Stress

Terahertz electroluminescence from boron-doped silicon devices

2003 ◽  
Vol 83 (9) ◽  
pp. 1713-1715 ◽  
Author(s):  
T. N. Adam ◽  
R. T. Troeger ◽  
S. K. Ray ◽  
P.-C. Lv ◽  
J. Kolodzey
Keyword(s):  
Silicon Devices ◽  
Boron Doped ◽  
Doped Silicon

QUANTUM COMPUTATION IN SILICON — DEVICE MODELING, TRANSPORT AND FAULT-TOLERANCE

2007 ◽  
Vol 22 (27) ◽  
pp. 4999-5009
Author(s):  
L. C. L. HOLLENBERG
Keyword(s):  
Fault Tolerance ◽  
Quantum Computation ◽  
Fault Tolerant ◽  
Single Atom ◽  
Device Modeling ◽  
Silicon Devices ◽  
Doped Silicon ◽  
Modeling Transport ◽  
Silicon Device ◽  
The Way

The Kane concept of quantum computation using single phosphorus donors in silicon has revolutionized the way we think about P -doped silicon devices. However, because of the enormous effort required in fabricating such devices using single atom techniques, detailed modeling and assessment of fault-tolerant operation is required to determine and optimize the scalability, and indeed feasibility, of such a vision.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Emission of pure and doped silicon exposed to electrons

2003 ◽  
Vol 14 (0) ◽  
pp. 134-137
Author(s):  
М. І. Лінтур ◽  
М. В. Приходько ◽  
Л. М. Маркович ◽  
Н. Аль-Дургам ◽  
С. С. Поп
Keyword(s):  
Doped Silicon
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