scholarly journals Visualizing charge transport in silicon nanocrystals embedded in SiO2 films with electrostatic force microscopy

2004 ◽  
Vol 85 (14) ◽  
pp. 2941-2943 ◽  
Author(s):  
C. Y. Ng ◽  
T. P. Chen ◽  
H. W. Lau ◽  
Y. Liu ◽  
M. S. Tse ◽  
...  
Keyword(s):  
Charge Transport ◽  
Silicon Nanocrystals ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Sio2 Films ◽  
Force Microscopy

Direct Imaging of Charge Transport in Progressively Reduced Graphene Oxide Using Electrostatic Force Microscopy

ACS Nano ◽  
2015 ◽  
Vol 9 (3) ◽  
pp. 2981-2988 ◽  
Author(s):  
Sibel Ebru Yalcin ◽  
Charudatta Galande ◽  
Rajesh Kappera ◽  
Hisato Yamaguchi ◽  
Ulises Martinez ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Charge Transport ◽  
Reduced Graphene Oxide ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Direct Imaging ◽  
Force Microscopy ◽  
Reduced Graphene

scholarly journals Dispersive charge transport along the surface of an insulating layer observed by electrostatic force microscopy

2005 ◽  
Vol 71 (15) ◽  
Author(s):  
Jérôme Lambert ◽  
Grégoire de Loubens ◽  
Claudine Guthmann ◽  
Michel Saint-Jean ◽  
Thierry Mélin
Keyword(s):  
Charge Transport ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Insulating Layer ◽  
Force Microscopy

DISSIPATION OF CHARGES IN SILICON NANOCRYSTALS EMBEDDED IN SiO2 DIELECTRIC FILMS: AN ELECTROSTATIC FORCE MICROSCOPY STUDY

2005 ◽  
Vol 04 (04) ◽  
pp. 709-715
Author(s):  
C. Y. NG ◽  
H. W. LAU ◽  
T. P. CHEN ◽  
O. K. TAN ◽  
V. S. W. LIM
Keyword(s):  
Silicon Nanocrystals ◽  
Electrostatic Force ◽  
Microscopy Study ◽  
Dielectric Films ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy ◽  
Charge Cloud ◽  
Lower Charge ◽  
Charge Decay ◽  
Charge Change

In this paper, we report a mapping of charge transport in silicon nanocrystals ( nc - Si ) embedded in SiO 2 dielectric films with electrostatic force microscopy (EFM). By using contact EFM mode, positive and negative charges can be deposited on nc - Si . We found that the charge diffusion from the charged nc - Si to the surrounding neighboring uncharged nc - Si is the dominant mechanism during charge decay. A longer decay time was observed for a wider area of stored charge (i.e. 3 charged spots) due to the diffusion of charges being blocked by the surrounding charged nc - Si . This result is consistent with the increase of charge cloud size during the charge decay and the lower charge change percentage for 3 charged spots.

scholarly journals Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

2019 ◽  
Vol 10 ◽  
pp. 617-633 ◽  
Author(s):  
Aaron Mascaro ◽  
Yoichi Miyahara ◽  
Tyler Enright ◽  
Omur E Dagdeviren ◽  
Peter Grütter
Keyword(s):  
Atomic Force Microscopy ◽  
Electrostatic Force ◽  
Oscillation Period ◽  
Electrostatic Force Microscopy ◽  
Time Varying ◽  
Time Resolved ◽  
Battery Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Techniques

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

scholarly journals Broadband nanodielectric spectroscopy by means of amplitude modulation electrostatic force microscopy (AM-EFM)

2011 ◽  
Vol 111 (8) ◽  
pp. 1366-1369 ◽  
Author(s):  
G.A. Schwartz ◽  
C. Riedel ◽  
R. Arinero ◽  
Ph. Tordjeman ◽  
A. Alegría ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy

Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy.

2013 ◽  
Vol 1493 ◽  
pp. 201-206
Author(s):  
Rubana Bahar Priti ◽  
Venkat Bommisetty
Keyword(s):  
Grain Boundaries ◽  
Charge Distribution ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Nanocrystalline Silicon ◽  
Electrostatic Force Microscopy ◽  
Strained Si ◽  
Force Microscopy ◽  
Local Charge ◽  
Before And After

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces.

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