Local Charge Transport in Two-Dimensional PbSe Nanocrystal Arrays Studied by Electrostatic Force Microscopy

Nano Letters ◽  
2005 ◽  
Vol 5 (7) ◽  
pp. 1463-1468 ◽  
Author(s):  
Zonghai Hu ◽  
Michael D. Fischbein ◽  
Marija Drndić
Keyword(s):  
Charge Transport ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Local Charge

Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy.

2013 ◽  
Vol 1493 ◽  
pp. 201-206
Author(s):  
Rubana Bahar Priti ◽  
Venkat Bommisetty
Keyword(s):  
Grain Boundaries ◽  
Charge Distribution ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Nanocrystalline Silicon ◽  
Electrostatic Force Microscopy ◽  
Strained Si ◽  
Force Microscopy ◽  
Local Charge ◽  
Before And After

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces.

Direct Imaging of Charge Transport in Progressively Reduced Graphene Oxide Using Electrostatic Force Microscopy

ACS Nano ◽  
2015 ◽  
Vol 9 (3) ◽  
pp. 2981-2988 ◽  
Author(s):  
Sibel Ebru Yalcin ◽  
Charudatta Galande ◽  
Rajesh Kappera ◽  
Hisato Yamaguchi ◽  
Ulises Martinez ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Charge Transport ◽  
Reduced Graphene Oxide ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Direct Imaging ◽  
Force Microscopy ◽  
Reduced Graphene

scholarly journals Dispersive charge transport along the surface of an insulating layer observed by electrostatic force microscopy

2005 ◽  
Vol 71 (15) ◽  
Author(s):  
Jérôme Lambert ◽  
Grégoire de Loubens ◽  
Claudine Guthmann ◽  
Michel Saint-Jean ◽  
Thierry Mélin
Keyword(s):  
Charge Transport ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Insulating Layer ◽  
Force Microscopy

scholarly journals Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

2008 ◽  
Vol 19 (32) ◽  
pp. 325703 ◽  
Author(s):  
Shu-Cheng Chin ◽  
Yuan-Chih Chang ◽  
Chen-Chih Hsu ◽  
Wei-Hsiang Lin ◽  
Chih-I Wu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Two Dimensional ◽  
Dopant Profiling ◽  
Force Microscopy

scholarly journals Visualizing charge transport in silicon nanocrystals embedded in SiO2 films with electrostatic force microscopy

2004 ◽  
Vol 85 (14) ◽  
pp. 2941-2943 ◽  
Author(s):  
C. Y. Ng ◽  
T. P. Chen ◽  
H. W. Lau ◽  
Y. Liu ◽  
M. S. Tse ◽  
...  
Keyword(s):  
Charge Transport ◽  
Silicon Nanocrystals ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Sio2 Films ◽  
Force Microscopy

scholarly journals Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

2019 ◽  
Vol 10 ◽  
pp. 617-633 ◽  
Author(s):  
Aaron Mascaro ◽  
Yoichi Miyahara ◽  
Tyler Enright ◽  
Omur E Dagdeviren ◽  
Peter Grütter
Keyword(s):  
Atomic Force Microscopy ◽  
Electrostatic Force ◽  
Oscillation Period ◽  
Electrostatic Force Microscopy ◽  
Time Varying ◽  
Time Resolved ◽  
Battery Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Techniques

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

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