Studies on high resolution x-ray diffraction, optical and transport properties of InAsxSb1−x∕GaAs (x⩽0.06) heterostructure grown using liquid phase epitaxy

2004 ◽  
Vol 96 (9) ◽  
pp. 4989-4997 ◽  
Author(s):  
V. K. Dixit ◽  
Bhavtosh Bansal ◽  
V. Venkataraman ◽  
H. L. Bhat ◽  
K. S. Chandrasekharan ◽  
...  
Keyword(s):  
Liquid Phase ◽  
High Resolution ◽  
Transport Properties ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals High-resolution X-ray diffraction study of AlxGa1−xSb alloys grown by liquid-phase epitaxy

2008 ◽  
Vol 64 (a1) ◽  
pp. C592-C592
Author(s):  
M. Rojas ◽  
E. Momox ◽  
R. Delgado ◽  
V. Gayou ◽  
A. Orduna ◽  
...  
Keyword(s):  
Liquid Phase ◽  
High Resolution ◽  
Diffraction Study ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

X‐ray diffraction studies of the epitaxy ofa/b‐axes oriented YBa2Cu3O7−δfilms grown by liquid phase epitaxy

1994 ◽  
Vol 75 (10) ◽  
pp. 5243-5248 ◽  
Author(s):  
F. Sandiumenge ◽  
C. Dubs ◽  
P. Görnert ◽  
S. Galí
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Aspect ratio of liquid phase epitaxial SiGe∕Si(001) islands as probed by high resolution x-ray diffraction

2004 ◽  
Vol 96 (3) ◽  
pp. 1447-1450 ◽  
Author(s):  
M. Hanke ◽  
M. Schmidbauer ◽  
D. Grigoriev ◽  
R. Köhler
Keyword(s):  
Liquid Phase ◽  
High Resolution ◽  
Aspect Ratio ◽  
X Ray Diffraction ◽  
Liquid Phase Epitaxial ◽  
X Ray

The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1−xSnxSe1−yTey Quaternary Alloys

1993 ◽  
Vol 311 ◽  
Author(s):  
Patrick J. Mccann
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Strain Energy ◽  
Lattice Strain ◽  
Chemical Potential ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Lattice Matched

ABSTRACTIV-VI semiconductor Pb1−xsSnxsSe1−ysTeys quaternary alloys were grown on (111) BaF2 by liquid phase epitaxy (LPE). X-ray diffraction analysis shows that liquid (Pb1−x1Snx1)0.99(Se1−y1Tey1)0.01 solutions produce alloys lattice-matched with the substrate wheny1 = 60%, 58%, and 57%, and x1 = 20%, 40%, and 60%, respectively. These data suggest that the chemical potential of tellurium in the Pb1−xsSnxsSe1−ysTeys solid solution decreases as tin and tellurium concentrations increase. It is argued that this reduction is due to decreasing strain energy driven segregation of tellurium from the solid to the liquid as the tin concentration increases.

Praseodymium Dioxide Doping of In1−xGaxAsyP1−y Epilayer Grown with Liquid Phase Epitaxy

1993 ◽  
Vol 301 ◽  
Author(s):  
Kari T. Hjelt ◽  
Markku A. Sopanen ◽  
Harri K. Lipsanen ◽  
Turkka O. Tuomi ◽  
Stanislav HasenÖhrl
Keyword(s):  
Liquid Phase ◽  
Carrier Concentration ◽  
Liquid Phase Epitaxy ◽  
Growth Process ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Growth Solution ◽  
X Ray ◽  
Donor Acceptor ◽  
Layer Composition

ABSTRACTPraseodymium dioxide (PrO2) -doped In0.69Ga0.31As0.67P0.33 layers are grown on semiinsulating In P substrates with liquid-phase epitaxy. The PrO2 doping of the growth solution varies from 0 to 0.32 wt %. The quaternary In0.69Ga0.31As0.67P0.33 layer composition determined with two-crystal X-ray diffraction and photoreflectance is found to be independent of the PrO2 concentration in the melt. The photoluminescence spectra measured at 12 K show both exciton and donor-acceptor peaks, the magnitudes of which depend on the PrO2 doping. The carrier concentration of the n-type quaternary layer decreases and the mobility increases with increasing PrO2 concentration and reaches the values of 8.3.1015 cm−3 and 7300 cm2/Vs, respectively, at about 0.1 wt% at 77 K. The experiments show that PrO2 has an impurity gettering effect in the growth process.

scholarly journals Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography

CrystEngComm ◽  
2021 ◽  
Vol 23 (7) ◽  
pp. 1628-1633
Author(s):  
Jaemyung Kim ◽  
Okkyun Seo ◽  
L. S. R. Kumara ◽  
Toshihide Nabatame ◽  
Yasuo Koide ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

We demonstrate the crystal quality of a 6 inch (0001) plane free-standing GaN substrate grown using a Na-flux based liquid phase epitaxy method.

STUDY OF Al0.065Ga0.935Sb AVALANCHE PHOTODETECTORS FOR 1.55 μm OF WAVELENGTH BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1741-1745 ◽  
Author(s):  
J. MARTÍNEZ-JUÁREZ ◽  
J. OLVERA ◽  
T. DÍAZ ◽  
F. DE ANDA ◽  
A. ESCOBOSA
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Liquid Phase Epitaxy ◽  
Donor Concentration ◽  
X Ray Diffraction ◽  
Avalanche Multiplication ◽  
X Ray ◽  
Avalanche Photodetectors

We report the results of a study of Al 0.065 Ga 0.935 Sb avalanche photodetectors grown on n-GaSb substrates. The devices have been fabricated from layers with the structure p-Al 0.13 Ga 0.87 Sb/n-Al 0.065 Ga 0.935 Sb:Te/n-GaSb (substrate) grown by liquid phase epitaxy (LPE) with a composition matched to detect light of 1.55 μm. The heterostructures were grown from Ga-rich solutions at 400°C. Just after their growth, the structures were subjected to baking processes inside the growth chamber. The baking time was varied and its influence on the breakdown voltages of the junctions was observed. Breakdown voltages up to 12 V, very low net donor concentration in the active layer (1E15 cm -3), and avalanche multiplication factors of around 50 have been obtained. The carrier concentration was determined by the C–V method. Photoluminescence and X-ray diffraction measurements were carried out to investigate the properties of the LPE-grown ternary layers, to determine the band gap and to estimate the quality of epitaxial layers. The photoresponses of the detectors are also presented.

Dislocation Distributions in Cd1-xHgxTe/CdTe and Cd1-xHgxTe/Cd1-yZnyTe Grown by Liquid Phase Epitaxy

1994 ◽  
Vol 356 ◽  
Author(s):  
C. C. R. Watson ◽  
K. Durose ◽  
E. O’Keefe ◽  
J. M. Hudson ◽  
B. K. Tanner
Keyword(s):  
Liquid Phase ◽  
Dislocation Density ◽  
Liquid Phase Epitaxy ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
O 24

Epilayers of LPE Cdo.24Hgo.76Te grown on (111)B CdTe and Cdi-xZnxTe substrates have been examined by defect etching and triple axis x-ray diffraction. Defect etching of bevelled layers has shown the threading dislocation density to fall with increasing distance from the heterointerface, for distances <6μm. In thicker regions however a constant ‘background’ dislocation density is observed. Background dislocation densities of ∼ 3 x 105cm-2 and 9 x 104cm-2 have been measured for layers grown on CdTe and Cdo.96Zn0.04Te respectively, this is compared with a substrate dislocation density of ∼ 3 x 104cm-2 measured in both types of substrates. The increase in the dislocation density within the epilayers compared with the corresponding substrate is discussed. An explanation is also given for the displacement of the peak dislocation density, from the interface to within the layer, observed in the Cd0.76Hg0.24Te / Cd0.96Zn0.04Te system.

Liquid Phase Epitaxy of Si1−xGex(O<×≲1) On Partially Masked Si-Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
H.-P. Trah ◽  
M.I. Alonso ◽  
M. Konuma ◽  
E. Bauser ◽  
H. Cerva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Seeded Growth ◽  
X Ray ◽  
Si Substrates ◽  
Lateral Overgrowth ◽  
Linear Dimensions ◽  
Transmission Electron ◽  
One Step

ABSTRACTSingle-crystal Si1−x Gex(O<×≲1) layers are grown by seeded growth on partially SiO2-masked Si-substrates, using a one-step liquid phase epitaxy (LPE) process. The seed regions are stripe- and hole-shaped windows in the oxide, having linear dimensions between 1.5 and 100 μm. The windows extend in different orientation on (111) and (100) orientated substrates. Lateral overgrowth over the oxide-masked areas is achieved up to 70 μm in <110>-directions. X-ray diffraction and Raman scattering show that the epitaxial islands are homogeneous and of excellent crystal quality. In the regions of lateral overgrowth the dislocation density is reduced considerably as shown by defect-etching and cross section transmission electron microscopy.

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

2010 ◽  
Vol 159 ◽  
pp. 87-90
Author(s):  
M. Milanova ◽  
Roumen Kakanakov ◽  
G. Koleva ◽  
P. Vitanov ◽  
V. Bakardjieva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Al Content ◽  
Quaternary Compounds ◽  
Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

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