scholarly journals Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography

CrystEngComm ◽  
2021 ◽  
Vol 23 (7) ◽  
pp. 1628-1633
Author(s):  
Jaemyung Kim ◽  
Okkyun Seo ◽  
L. S. R. Kumara ◽  
Toshihide Nabatame ◽  
Yasuo Koide ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

We demonstrate the crystal quality of a 6 inch (0001) plane free-standing GaN substrate grown using a Na-flux based liquid phase epitaxy method.

STUDY OF Al0.065Ga0.935Sb AVALANCHE PHOTODETECTORS FOR 1.55 μm OF WAVELENGTH BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1741-1745 ◽  
Author(s):  
J. MARTÍNEZ-JUÁREZ ◽  
J. OLVERA ◽  
T. DÍAZ ◽  
F. DE ANDA ◽  
A. ESCOBOSA
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Liquid Phase Epitaxy ◽  
Donor Concentration ◽  
X Ray Diffraction ◽  
Avalanche Multiplication ◽  
X Ray ◽  
Avalanche Photodetectors

We report the results of a study of Al 0.065 Ga 0.935 Sb avalanche photodetectors grown on n-GaSb substrates. The devices have been fabricated from layers with the structure p-Al 0.13 Ga 0.87 Sb/n-Al 0.065 Ga 0.935 Sb:Te/n-GaSb (substrate) grown by liquid phase epitaxy (LPE) with a composition matched to detect light of 1.55 μm. The heterostructures were grown from Ga-rich solutions at 400°C. Just after their growth, the structures were subjected to baking processes inside the growth chamber. The baking time was varied and its influence on the breakdown voltages of the junctions was observed. Breakdown voltages up to 12 V, very low net donor concentration in the active layer (1E15 cm -3), and avalanche multiplication factors of around 50 have been obtained. The carrier concentration was determined by the C–V method. Photoluminescence and X-ray diffraction measurements were carried out to investigate the properties of the LPE-grown ternary layers, to determine the band gap and to estimate the quality of epitaxial layers. The photoresponses of the detectors are also presented.

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

2010 ◽  
Vol 159 ◽  
pp. 87-90
Author(s):  
M. Milanova ◽  
Roumen Kakanakov ◽  
G. Koleva ◽  
P. Vitanov ◽  
V. Bakardjieva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Al Content ◽  
Quaternary Compounds ◽  
Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

X‐ray diffraction studies of the epitaxy ofa/b‐axes oriented YBa2Cu3O7−δfilms grown by liquid phase epitaxy

1994 ◽  
Vol 75 (10) ◽  
pp. 5243-5248 ◽  
Author(s):  
F. Sandiumenge ◽  
C. Dubs ◽  
P. Görnert ◽  
S. Galí
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Diffusion ◽  
Annealing Time ◽  
Crystal Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Time

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

scholarly journals High-resolution X-ray diffraction study of AlxGa1−xSb alloys grown by liquid-phase epitaxy

2008 ◽  
Vol 64 (a1) ◽  
pp. C592-C592
Author(s):  
M. Rojas ◽  
E. Momox ◽  
R. Delgado ◽  
V. Gayou ◽  
A. Orduna ◽  
...  
Keyword(s):  
Liquid Phase ◽  
High Resolution ◽  
Diffraction Study ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study

2005 ◽  
Vol 476 (1) ◽  
pp. 206-209 ◽  
Author(s):  
Toru Ujihara ◽  
Shinji Munetoh ◽  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Noritaka Usami ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Spectroscopic Study ◽  
Liquid Phase Epitaxy ◽  
Crystal Quality ◽  
Raman Spectroscopic ◽  
Raman Spectroscopic Study

Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)

2011 ◽  
Vol 413 ◽  
pp. 11-17 ◽  
Author(s):  
Bin Feng Ding ◽  
Yong Quan Chai
Keyword(s):  
Chemical Vapor ◽  
Crystal Quality ◽  
Tetragonal Distortion ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A GaN epilayer with tri-layer AlGaN interlayer grown on Si (111) by metal-organic chemical vapor deposition (MOCVD) method was discussed by synchrotron radiation x-ray diffraction (SRXRD) and Rutherford backscattering (RBS)/C. The crystal quality of the epilayer is very good with a χmin=2.1%. According to the results of the θ-2θ scan of GaN(0002) and GaN(1122), the epilayer elastic strains in perpendicular and parallel directions were calculated respectively to be-0.019% and 0.063%. By the angular scan using RBS/C around a symmetric [0001] axis and an asymmetric [1213] axis in the (1010) plane of the GaN layer, the tetragonal distortion (eT ) were determined to be 0.09%. This result coincides with that from SRXRD perfectly. The strain decreases gradually towards the near-surface layer, which will avoid the film cracks efficiently and improve the crystal quality of the GaN epilayer remarkably.

The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1−xSnxSe1−yTey Quaternary Alloys

1993 ◽  
Vol 311 ◽  
Author(s):  
Patrick J. Mccann
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Strain Energy ◽  
Lattice Strain ◽  
Chemical Potential ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Lattice Matched

ABSTRACTIV-VI semiconductor Pb1−xsSnxsSe1−ysTeys quaternary alloys were grown on (111) BaF2 by liquid phase epitaxy (LPE). X-ray diffraction analysis shows that liquid (Pb1−x1Snx1)0.99(Se1−y1Tey1)0.01 solutions produce alloys lattice-matched with the substrate wheny1 = 60%, 58%, and 57%, and x1 = 20%, 40%, and 60%, respectively. These data suggest that the chemical potential of tellurium in the Pb1−xsSnxsSe1−ysTeys solid solution decreases as tin and tellurium concentrations increase. It is argued that this reduction is due to decreasing strain energy driven segregation of tellurium from the solid to the liquid as the tin concentration increases.

Praseodymium Dioxide Doping of In1−xGaxAsyP1−y Epilayer Grown with Liquid Phase Epitaxy

1993 ◽  
Vol 301 ◽  
Author(s):  
Kari T. Hjelt ◽  
Markku A. Sopanen ◽  
Harri K. Lipsanen ◽  
Turkka O. Tuomi ◽  
Stanislav HasenÖhrl
Keyword(s):  
Liquid Phase ◽  
Carrier Concentration ◽  
Liquid Phase Epitaxy ◽  
Growth Process ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Growth Solution ◽  
X Ray ◽  
Donor Acceptor ◽  
Layer Composition

ABSTRACTPraseodymium dioxide (PrO2) -doped In0.69Ga0.31As0.67P0.33 layers are grown on semiinsulating In P substrates with liquid-phase epitaxy. The PrO2 doping of the growth solution varies from 0 to 0.32 wt %. The quaternary In0.69Ga0.31As0.67P0.33 layer composition determined with two-crystal X-ray diffraction and photoreflectance is found to be independent of the PrO2 concentration in the melt. The photoluminescence spectra measured at 12 K show both exciton and donor-acceptor peaks, the magnitudes of which depend on the PrO2 doping. The carrier concentration of the n-type quaternary layer decreases and the mobility increases with increasing PrO2 concentration and reaches the values of 8.3.1015 cm−3 and 7300 cm2/Vs, respectively, at about 0.1 wt% at 77 K. The experiments show that PrO2 has an impurity gettering effect in the growth process.

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

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