Ultrafast carrier relaxation and stimulated emission in AlGaN/GaN multiple quantum wells

2003 ◽  
Author(s):  
Umit Ozgur ◽  
Soojeong Choi ◽  
Henry O. Everitt ◽  
Lei He ◽  
Hadis Morkoc
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

scholarly journals Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

2003 ◽  
Vol 82 (9) ◽  
pp. 1416-1418 ◽  
Author(s):  
Ümit Özgür ◽  
Henry O. Everitt ◽  
Stacia Keller ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

scholarly journals Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells

2003 ◽  
Vol 82 (23) ◽  
pp. 4080-4082 ◽  
Author(s):  
Ümit Özgür ◽  
Henry O. Everitt ◽  
Lei He ◽  
Hadis Morkoç
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

Ultrafast carrier relaxation in group-III nitride multiple quantum wells

2004 ◽  
Author(s):  
Umit Ozgur ◽  
Henry O. Everitt ◽  
Stacia Keller ◽  
Steven P. DenBaars ◽  
Lei He ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Relaxation ◽  
Group Iii ◽  
Ultrafast Carrier ◽  
Group Iii Nitride

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN

2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped

scholarly journals Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

2018 ◽  
Author(s):  
Weijian Chen ◽  
Gavin Conibeer ◽  
Michael Latzel ◽  
Silke H. Christiansen ◽  
Xiaoming Wen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Dynamics ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells

1998 ◽  
Vol 264-268 ◽  
pp. 1433-1436
Author(s):  
L. Calcagnile ◽  
G. Coli ◽  
D. Rinaldi ◽  
R. Cingolani ◽  
H. Tang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

Sign in / Sign up

Export Citation Format

Share Document