Well-in-Well Structure for High-Speed Carrier Relaxation into Quantum Wells

2011 ◽  
Vol 50 (8R) ◽  
pp. 080209
Author(s):  
Yasutaka Higa ◽  
Mikio Sorimachi ◽  
Takuya Nishinome ◽  
Tomoyuki Miyamoto
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Relaxation

Well-in-Well Structure for High-Speed Carrier Relaxation into Quantum Wells

2011 ◽  
Vol 50 (8) ◽  
pp. 080209
Author(s):  
Yasutaka Higa ◽  
Mikio Sorimachi ◽  
Takuya Nishinome ◽  
Tomoyuki Miyamoto
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Relaxation

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

QWIPs DESIGNED FOR HIGH ABSORPTION AND HIGH OPERATING TEMPERATURE

2002 ◽  
Vol 12 (03) ◽  
pp. 803-819 ◽  
Author(s):  
H. C. Liu ◽  
R. Dudek ◽  
A. Shen ◽  
E. Dupont ◽  
C.-Y. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Room Temperature ◽  
Operating Temperature ◽  
Absorption Efficiency ◽  
Thermo Electric ◽  
Doping Density ◽  
Detection Of Weak Signals ◽  
High Absorption ◽  
Room Temperature Operation

For the majority of applications involving detection of weak signals or thermal imaging, the quantum well infrared photodetector (QWIP) is designed to have the highest possible detectivity and operating temperature. The device parameters, such as the doping density, are chosen accordingly. In a different direction, the intrinsic short carrier lifetime (~ 5 ps) makes QWIPs well suited for high speed and high frequency applications. In such cases, since lasers are normally used, a high dark current can be tolerated. The most important parameter is then the absorption efficiency. For system simplicity and potential wide use, room temperature or near room temperature (reachable by thermo-electric cooling) operations are desirable. This paper discusses the QWIP design for high absorption and elevated temperature operation, and present a systematic experimental study on a set of GaAs/AlGaAs QWIPs with different doping densities. High absorption (~ 100%) and up to room temperature operation are achieved in devices having high doping densities and 100 quantum wells.

Atomic Force High Frequency Phonons Non-volatile Dynamic Random-Access Memory Compatible with Sub-7nm ULSI CMOS Technology

MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2577-2584
Author(s):  
James N. Pan
Keyword(s):  
Quantum Wells ◽  
High Frequency ◽  
Nonvolatile Memory ◽  
High Speed ◽  
Random Access ◽  
Cost Effective ◽  
Cmos Technology ◽  
Access Time ◽  
Cmos Process ◽  
Atomic Force

ABSTRACTThis paper reports a novel low power, fast nonvolatile memory utilizing high frequency phonons, atomic force dual quantum wells, ferromagnetism, coupled magnetic dipoles and random accessed magnetic devices. Very high-speed memories, such as SRAM and DRAM, are mostly volatile (data are lost when power is off). Nonvolatile memories, including FLASH and MRAM, are typically not as fast has DRAM or SRAM, and the voltages for WRITE/ERASE operations are relatively high. This paper describes a silicon nonvolatile memory that is compatible with advanced sub-7nm CMOS process. It consists of only one transistor (MOSFET) – small size, and more cost effective, compared with a 6-Transistor SRAM. There is no need to refresh, as required by DRAM. The access time can be less than 1ns – close to the speed level of relaxation time - much faster than traditional FLASH memories and comparable to volatile DRAM. The operating voltages for all memory functions can be as low as high speed CMOS.

High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells

2016 ◽  
Vol 10 (1) ◽  
pp. 011004 ◽  
Author(s):  
Sakib Muhtadi ◽  
Seong Mo Hwang ◽  
Antwon L. Coleman ◽  
Alexander Lunev ◽  
Fatima Asif ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Uv Photodetectors ◽  
Al Content ◽  
Solar Blind ◽  
High Al Content
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