scholarly journals Pattern formation in a polymer thin film induced by an in-plane electric field

2004 ◽  
Vol 85 (7) ◽  
pp. 1161-1163 ◽  
Author(s):  
David Salac ◽  
Wei Lu ◽  
Chia-Wei Wang ◽  
Ann Marie Sastry
Keyword(s):  
Thin Film ◽  
Pattern Formation ◽  
Electric Field ◽  
Polymer Thin Film

Pattern formation induced by an electric field in a polymer–air–polymer thin film system

Soft Matter ◽  
2012 ◽  
Vol 8 (23) ◽  
pp. 6333 ◽  
Author(s):  
George Amarandei ◽  
Philippe Beltrame ◽  
Ian Clancy ◽  
Colm O'Dwyer ◽  
Arousian Arshak ◽  
...  
Keyword(s):  
Thin Film ◽  
Pattern Formation ◽  
Electric Field ◽  
Film System ◽  
Polymer Thin Film ◽  
Thin Film System

Pattern formation by dewetting of polymer thin film

2011 ◽  
Vol 36 (2) ◽  
pp. 269-293 ◽  
Author(s):  
Longjian Xue ◽  
Yanchun Han
Keyword(s):  
Thin Film ◽  
Pattern Formation ◽  
Polymer Thin Film

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO 3 (111) Thin Film

2021 ◽  
pp. 2101316
Author(s):  
Weinan Lin ◽  
Liang Liu ◽  
Qing Liu ◽  
Lei Li ◽  
Xinyu Shu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Field Control ◽  
Weyl Fermion

Conducting polymer thin film for optoelectronic devices applications

2021 ◽  
Author(s):  
Mohamed H. Abdel‐Aziz ◽  
Mohammed Zwawi ◽  
Ahmed F. Al‐Hossainy ◽  
Mohamed Sh. Zoromba
Keyword(s):  
Thin Film ◽  
Conducting Polymer ◽  
Optoelectronic Devices ◽  
Polymer Thin Film

Preparation and electrical properties of γ form poly(vinylidene fluoride) thin film by vapour deposition in the presence of an electric field

1991 ◽  
Vol 202 (2) ◽  
pp. 213-220 ◽  
Author(s):  
Akiyoshi Takeno ◽  
Norimasa Okui ◽  
Tetsuji Kitoh ◽  
Michiharu Muraoka ◽  
Susumu Umemoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Vapour Deposition ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

scholarly journals A Theoretical Study on an Elastic Polymer Thin Film-Based Capacitive Wind-Pressure Sensor

Polymers ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 2133
Author(s):  
Xue Li ◽  
Jun-Yi Sun ◽  
Bin-Bin Shi ◽  
Zhi-Hang Zhao ◽  
Xiao-Ting He
Keyword(s):  
Thin Film ◽  
Closed Form ◽  
Pressure Sensor ◽  
Closed Form Solution ◽  
Form Solution ◽  
Wind Pressure ◽  
Polymer Thin Film ◽  
Movable Electrode ◽  
Elastic Polymer ◽  
Electrode Plate

This study is devoted to the design of an elastic polymer thin film-based capacitive wind-pressure sensor to meet the anticipated use for real-time monitoring of structural wind pressure in civil engineering. This sensor is composed of four basic units: lateral elastic deflection unit of a wind-driven circular polymer thin film, parallel plate capacitor with a movable circular electrode plate, spring-driven return unit of the movable electrode plate, and dielectric materials between electrode plates. The capacitance of the capacitor varies with the parallel move of the movable electrode plate which is first driven by the lateral elastic deflection of the wind-driven film and then is, after the wind pressure is reduced or eliminated, returned quickly by the drive springs. The closed-form solution for the contact problem between the wind-driven thin film and the spring-driven movable electrode plate is presented, and its reliability is proved by the experiment conducted. The numerical examples conducted show that it is workable that by using the numerical calibration based on the presented closed-form solution the proposed sensor is designed into a nonlinear sensor with larger pressure-monitoring range and faster response speed than the linear sensor usually based on experimental calibration.

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