scholarly journals Work-function difference between Al and n-GaN from Al-gated n-GaN∕nitrided-thin-Ga2O3∕SiO2 metal oxide semiconductor structures

2004 ◽  
Vol 84 (26) ◽  
pp. 5413-5415 ◽  
Author(s):  
Choelhwyi Bae ◽  
Cristiano Krug ◽  
Gerald Lucovsky ◽  
Arpan Chakraborty ◽  
Umesh Mishra
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Work Function Difference ◽  
Function Difference

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition

scholarly journals Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization

2021 ◽  
pp. 2101004
Author(s):  
José M. V. Cunha ◽  
M. Alexandra Barreiros ◽  
Marco A. Curado ◽  
Tomás S. Lopes ◽  
Kevin Oliveira ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Characterization ◽  
Semiconductor Structures
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