Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

2004 ◽  
Vol 84 (23) ◽  
pp. 4708-4710 ◽  
Author(s):  
M. Hiramatsu ◽  
K. Shiji ◽  
H. Amano ◽  
M. Hori
2013 ◽  
Vol 13 (3) ◽  
pp. 1956-1960
Author(s):  
Atsuto Okamoto ◽  
Kei Tanaka ◽  
Masamichi Yoshimura ◽  
Kazuyuki Ueda ◽  
Pradip Ghosh ◽  
...  

2010 ◽  
Vol 133 (3) ◽  
Author(s):  
Myung Gwan Hahm ◽  
Young-Kyun Kwon ◽  
Ahmed Busnaina ◽  
Yung Joon Jung

Due to their unique one-dimensional nanostructure along with excellent mechanical, electrical, and optical properties, carbon nanotubes (CNTs) become a promising material for diverse nanotechnology applications. However, large-scale and structure controlled synthesis of CNTs still have many difficulties due to the lack of understanding of the fundamental growth mechanism of CNTs, as well as the difficulty of controlling atomic-scale physical and chemical reactions during the nanotube growth process. Especially, controlling the number of graphene wall, diameter, and chirality of CNTs are the most important issues that need to be solved to harness the full potential of CNTs. Here we report the large-scale selective synthesis of vertically aligned single walled carbon nanotubes (SWNTs) and double walled carbon nanotubes (DWNTs) by controlling the size of catalyst nanoparticles in the highly effective oxygen assisted thermal chemical vapor deposition (CVD) process. We also demonstrate a simple but powerful strategy for synthesizing ultrahigh density and diameter selected vertically aligned SWNTs through the precise control of carbon flow during a thermal CVD process.


Author(s):  
Shu KONDO ◽  
Daiki YAMAMOTO ◽  
Kamal Prasad Prasad Sharma ◽  
Yazid Yaakob ◽  
Takahiro SAIDA ◽  
...  

Abstract We performed single-walled carbon nanotube (SWCNT) growth on flexible stainless-steel foils by applying alcohol catalytic chemical vapor deposition using an Ir catalyst with an alumina buffer layer. When the alumina thickness was 90 nm, vertically aligned SWCNTs with a thickness of 4.6 m were grown. In addition, Raman results showed that the diameters of most SWCNTs were distributed below 1.1 nm. Compared with conventional chemical vapor deposition growth where Si wafers are used as substrates, this method is more cost effective and easier to extend for mass production of small-diameter SWCNTs.


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