Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond

2004 ◽  
Vol 84 (22) ◽  
pp. 4493-4495 ◽  
Author(s):  
S. M. Hearne ◽  
D. N. Jamieson ◽  
E. Trajkov ◽  
S. Prawer ◽  
J. E. Butler
Keyword(s):  
Grain Boundary ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Chemical Vapor Deposited

Corrosion of polycrystalline ZnSe by alternating high voltage in a saline solution

1991 ◽  
Vol 6 (4) ◽  
pp. 667-669
Author(s):  
Joseph King
Keyword(s):  
Grain Boundary ◽  
High Voltage ◽  
Salt Solution ◽  
Saline Solution ◽  
Prolonged Exposure ◽  
Low Voltage ◽  
Mechanical Damage ◽  
Chemical Vapor ◽  
Nacl Solution ◽  
Chemical Vapor Deposited

Prolonged exposure of chemical vapor deposited, polycrystalline ZnSe to high ac voltages in the presence of a 1 molal NaCl solution induces severe mechanical damage. The damage takes the form of defects which originate at the surface and grow intergranularly into the bulk with a bush-like morphology. Neither exposure to the salt solution in the absence of the high voltage nor low voltage dc electrolytic exposure produces the defects. The damage may be associated with an intergranular hydride phase or grain boundary impurity segregations present or formed during the environmental exposure.

Temperature dependent mobility in single‐crystal and chemical vapor‐deposited diamond

1993 ◽  
Vol 73 (6) ◽  
pp. 2888-2894 ◽  
Author(s):  
L. S. Pan ◽  
D. R. Kania ◽  
P. Pianetta ◽  
J. W. Ager ◽  
M. I. Landstrass ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Chemical Vapor Deposited

On the Adhesion of LPCVD WSi2 to Doped and Undoped Polysilicon

1988 ◽  
Vol 119 ◽  
Author(s):  
K. Shenai ◽  
P. A. Piacente ◽  
N. Lewis ◽  
M. D. McConnell ◽  
G. A. Smith ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Chemical Vapor ◽  
Atomic Ratio ◽  
Silicide Film ◽  
Grain Structures ◽  
Integrated Devices ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Pressure Chemical ◽  
And Diffusion

AbstractWe report on the adhesion characteristics of Low Pressure Chemical Vapor Deposited (LPCVD) WSi2 to doped and undoped polysilicon when used for fabricating silicon discreie and integrated devices. About 3000Å of silicon rich (Si:W atomic ratio of 2.6) LPCVD WSi2 was deposited on 6 kÅ of polysilicon and annealed in nitriding and oxidizing ambients at various temperatures from 1000°C to 1100°C to lower the sheet resistance. Detailed material analyses of as-deposited and annealed polycides were performed using Auger, SIMS, RBS, TEM, and SEM and electrical conductivities of the films were measured using the four point probe. In some samples, the oxide grown on the silicide film was wet etched prior to implanting and diffusing As corresponding to the source/drain diffusions in power FET's. It was observed that polysilicon doping, WSi2 deposition and annealing, oxide or nitride etching, implantation and diffusion of As - all had significant impact on the grain structures of silicide and polysilicon, adhesion of the silicide film to polysilicon, and the electrical conductivity of the silicide. In samples where the oxide grown on the silicide was wet etched, enhanced grain boundary related oxidation of the silicide and polysilicon and seepage of the wet etchant through sequential etching of grain boundary oxide resulted in poor adhesion of WSi2 grains to polysilicon and eventual silicide peeloff. This problem was severe in samples which were not implanted with As but subjected to 900°C, 60 min. source drive.

Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies

Nanoscale ◽  
2016 ◽  
Vol 8 (5) ◽  
pp. 3008-3018 ◽  
Author(s):  
Amit S. Pawbake ◽  
Mahendra S. Pawar ◽  
Sandesh R. Jadkar ◽  
Dattatray J. Late
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Lateral Size ◽  
Large Area ◽  
Temperature Dependent ◽  
Chemical Vapor Deposited ◽  
Metal Dichalcogenides ◽  
Spectroscopy Studies

We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 μm in lateral size.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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