Surface‐roughness and grain‐boundary effects on the optical properties of low‐pressure chemical‐vapor‐deposited silicon thin films by spectroscopic ellipsometry

1989 ◽  
Vol 65 (6) ◽  
pp. 2416-2426 ◽  
Author(s):  
S. Logothetidis
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Grain Boundary ◽  
Spectroscopic Ellipsometry ◽  
Chemical Vapor ◽  
Boundary Effects ◽  
Silicon Thin Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

On the Adhesion of LPCVD WSi2 to Doped and Undoped Polysilicon

1988 ◽  
Vol 119 ◽  
Author(s):  
K. Shenai ◽  
P. A. Piacente ◽  
N. Lewis ◽  
M. D. McConnell ◽  
G. A. Smith ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Chemical Vapor ◽  
Atomic Ratio ◽  
Silicide Film ◽  
Grain Structures ◽  
Integrated Devices ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Pressure Chemical ◽  
And Diffusion

AbstractWe report on the adhesion characteristics of Low Pressure Chemical Vapor Deposited (LPCVD) WSi2 to doped and undoped polysilicon when used for fabricating silicon discreie and integrated devices. About 3000Å of silicon rich (Si:W atomic ratio of 2.6) LPCVD WSi2 was deposited on 6 kÅ of polysilicon and annealed in nitriding and oxidizing ambients at various temperatures from 1000°C to 1100°C to lower the sheet resistance. Detailed material analyses of as-deposited and annealed polycides were performed using Auger, SIMS, RBS, TEM, and SEM and electrical conductivities of the films were measured using the four point probe. In some samples, the oxide grown on the silicide film was wet etched prior to implanting and diffusing As corresponding to the source/drain diffusions in power FET's. It was observed that polysilicon doping, WSi2 deposition and annealing, oxide or nitride etching, implantation and diffusion of As - all had significant impact on the grain structures of silicide and polysilicon, adhesion of the silicide film to polysilicon, and the electrical conductivity of the silicide. In samples where the oxide grown on the silicide was wet etched, enhanced grain boundary related oxidation of the silicide and polysilicon and seepage of the wet etchant through sequential etching of grain boundary oxide resulted in poor adhesion of WSi2 grains to polysilicon and eventual silicide peeloff. This problem was severe in samples which were not implanted with As but subjected to 900°C, 60 min. source drive.

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