Dielectric Behavior of Solutions of Electrolytes in Solvents of Low Dielectric Constant I. A Calorimetric Method for Measuring Losses

1947 ◽  
Vol 15 (1) ◽  
pp. 47-54 ◽  
Author(s):  
A. H. Sharbaugh ◽  
C. Schmelzer ◽  
H. C. Eckstrom ◽  
C. A. Kraus
Keyword(s):  
Dielectric Constant ◽  
Dielectric Behavior ◽  
Calorimetric Method ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Solutions Of Electrolytes

The low dielectric constant and relaxation dielectric behavior in hydrogen-bonding metal–organic frameworks

RSC Advances ◽  
2015 ◽  
Vol 5 (56) ◽  
pp. 45213-45216 ◽  
Author(s):  
Shan-Shan Yu ◽  
Guo-Jun Yuan ◽  
Hai-Bao Duan
Keyword(s):  
Dielectric Constant ◽  
Hydrogen Bonding ◽  
High Temperature ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Dielectric Behavior ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A 3D hydrogen-bonding metal–organic framework shows a low dielectric constant and relaxation dielectric behavior at high temperature.

Willemite with Li2CO3 as a sintering aid for LTCC microwave substrates

2020 ◽  
Vol 37 (2) ◽  
pp. 67-72 ◽  
Author(s):  
Beata Synkiewicz-Musialska
Keyword(s):  
Dielectric Constant ◽  
Ceramic Powder ◽  
Dielectric Behavior ◽  
Low Dielectric Constant ◽  
Transmission Method ◽  
Sintering Aid ◽  
Content Type ◽  
Low Dielectric ◽  
Low Dissipation ◽  
Fabrication Procedure

Purpose The purpose of this paper is to report on fabrication procedure and present microstructure and dielectric behavior of willemite ceramic material with addition of 5% Li2CO3 as a sintering aid. Design/methodology/approach The samples were fabricated by ball milling of the ceramic powders, preparation of granulate and pressing and co-firing using temperature profile based on heating microscope observation. The dielectric properties of the material were measured by impedance spectroscopy (Hz-MHz), transmission method (GHz) and time domain spectroscopy (THz). The composition and microstructure of the material were investigated using X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy analysis. Ceramic powder was used to fabricate a green tape and low temperature co-fired ceramics (LTCC) multilayer structures, which in the next steps of the research were examined at the angle of cooperation with conductive pastes, strength and geometric repeatability. Findings The fabricated material showed low sintering temperature (920°C–960°C), low dielectric constant 6.2–6.34 and low dissipation factor at the level of 0.004–0.007. As LTCC material, willemite with 5% Li2CO3 addition showed good compatibility with AgPd conductive paste. Originality/value Search for new materials with low dielectric constant, applicable in LTCC technology, and development of their fabrication procedure are important tasks for the progress in modern microwave circuits.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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