scholarly journals Exact Current‐Voltage Relation for the Metal‐Insulator‐Metal Junction with a Simple Model for Trapping of Charge Carriers

1957 ◽  
Vol 28 (4) ◽  
pp. 454-458 ◽  
Author(s):  
Gwynn H. Suits
Keyword(s):  
Simple Model ◽  
Charge Carriers ◽  
Metal Insulator ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Relation

Comparison of ion beam and electron beam induced transport of hot charge carriers in metal-insulator-metal junctions

2011 ◽  
Vol 1354 ◽  
Author(s):  
Johannes Hopster ◽  
Detlef Diesing ◽  
Andreas Wucher ◽  
Marika Schleberger
Keyword(s):  
Electron Emission ◽  
Ion Beam ◽  
Charge Carriers ◽  
Applied Bias Voltage ◽  
Metal Insulator ◽  
Dissipation Process ◽  
Metal Insulator Metal ◽  
Internal Electron ◽  
Excitation Processes ◽  
Charged Ions

ABSTRACTThe generation of hot charge carriers within a solid bombarded by charged particles is investigated using biased thin film metal-insulator-metal (MIM) devices. For slow, highly charged ions approaching a metal surface the main dissipation process is electronic excitation of the substrate, leading to electron emission into the vacuum and internal electron emission across the MIM junction. In order to gain a deeper understanding of the distribution and transport of the excited charge carriers leading to the measured device current, we compare ion induced and electron induced excitation processes in terms of absolute internal emission yields as well as their dependence on the applied bias voltage.

Field and temperature dependent current-voltage characteristics of Al-Lu 2 O 3 -Al metal-insulator-metal diodes

2017 ◽  
Vol 520 ◽  
pp. 112-115 ◽  
Author(s):  
Shahnaz Akbar ◽  
Khalid Mahmood ◽  
M.F. Wasiq ◽  
M.Y. Nadeem ◽  
Muhammad Azhar Khan
Keyword(s):  
Temperature Dependent ◽  
Metal Insulator ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics

scholarly journals Blue Electroluminescence in SRO-HFCVD Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 943
Author(s):  
Haydee P. Martínez ◽  
José A. Luna ◽  
Roberto Morales ◽  
José F. Casco ◽  
José A. D. Hernández ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Carrier Transport ◽  
Light Emission ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Hot Filament ◽  
Quartz Substrates

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

Sign in / Sign up

Export Citation Format

Share Document