Shadowing Technique for Electron Microscopy—A Possible Substitute for the High‐Vacuum Evaporation Technique

1954 ◽  
Vol 25 (7) ◽  
pp. 901-903 ◽  
Author(s):  
Alvin E. Bills ◽  
Robert Lefker
2010 ◽  
Vol 2 (1) ◽  
pp. 119-131 ◽  
Author(s):  
K. Laes ◽  
S. Bereznev ◽  
R. Land ◽  
A. Tverjanovich ◽  
O. Volobujeva ◽  
...  

2008 ◽  
Author(s):  
Ajit Mahadkar ◽  
Alka Chauhan ◽  
Madhavi Thakurdesai ◽  
Deepak Gaikwad ◽  
P. Predeep ◽  
...  

2002 ◽  
Vol 13 (6) ◽  
pp. 475-480 ◽  
Author(s):  
R. P. Sharma ◽  
M. S. Raghuvanshi ◽  
S. V. Bhavsar ◽  
A. R. Patil ◽  
S. C. K. Misra

2016 ◽  
Vol 63 (10) ◽  
pp. 841-846 ◽  
Author(s):  
Abirami Muthukannan ◽  
Pasunkili Prema ◽  
Johnson Henry ◽  
Kannusamy Mohanraj ◽  
Ganesan Sivakumar

1991 ◽  
Vol 126 ◽  
pp. 99-101 ◽  
Author(s):  
B.N. Khare ◽  
W.R. Thompson ◽  
C. Sagan ◽  
E.T. Arakawa ◽  
C. Meisse ◽  
...  

AbstractA vacuum evaporation technique has been used to produce thin, optical quality films of samples of Type II kerogen and of insoluble organic residue from the Murchison meteorite. Using these films, optical constants have been measured from 0.15 to 40 μm for kerogen, and from 2.5 to 40 μm for the Murchison residue. The infrared absorption properties of these materials show many similarities, although Murchison residue is more opaque throughout the infrared than is kerogen, and shows no distinct aliphatic absorptions.


1996 ◽  
Vol 421 ◽  
Author(s):  
H. Chen ◽  
P. Han ◽  
X.D. Huang ◽  
L.Q. Hu ◽  
Y. Shi ◽  
...  

AbstractWe report a new semiconducting Ge-Si-Fe alloy thin film grown on Si(100) by reactive deposition epitaxy(RDE) using high vacuum evaporation technique. AES and XRD results show that the new alloy can be regarded as a distorted β-FeSi2 with the Ge participation. The direct band gap of the Ge-Si-Fe alloy was determined to be 0.83eV by optical transmission measurement, which means a red shift of band gap compared with that of β-FeSi2 (Eg=0.87eV).


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