Synthesis And Structural Studies Of CdTe Thin Films Formed By Vacuum Evaporation Technique

2008 ◽  
Author(s):  
Ajit Mahadkar ◽  
Alka Chauhan ◽  
Madhavi Thakurdesai ◽  
Deepak Gaikwad ◽  
P. Predeep ◽  
...  
Keyword(s):  
Thin Films ◽  
Vacuum Evaporation ◽  
Structural Studies ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
Vacuum Evaporation Technique

scholarly journals Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS

2018 ◽  
Vol 15 (2) ◽  
pp. 192-197
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Solar Cell ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Annealing Temperatures ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
Vacuum Evaporation Technique

Thin films of CdTe were prepared with thickness (500, 1000) nm on the glass substrate by vacuum evaporation technique at room temperature then treated different annealing temperatures (373,473,and 573)K for one hour. Results of the Hall Effect and the electrical conductivity of (I-V) characteristics were measured in darkness and light.at different annealing temperature results show that the thin films have ability to manufacture solar cells, and found that the efficient equal to (2.18%) for structure solar cell (Algrid / CdS / CdTe /glass/ Al) and the efficient equal to (1.12%) for structure solar cell (Algrid / CdS / CdTe /Si/ Al) with thick ness of (1000) nm with CdTe thin films at RT.

scholarly journals Structural and Optical Properties of Germanium Thin Films Prepared by the Vacuum Evaporation Technique

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Z. Al-Sharafi ◽  
S. Mohyeddine ◽  
Samir Osman Mohammed ◽  
R. M. Kershi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Vacuum Evaporation ◽  
Structural And Optical Properties ◽  
Average Value ◽  
Sem Image ◽  
Electron Transitions ◽  
Evaporation Technique ◽  
Vacuum Evaporation Technique

Germanium (Ge) thin films have been deposited onto the glass substrates by the vacuum evaporation technique. The effect of annealing temperature on the structural and optical properties of the germanium thin films was investigated. The structural and optical properties of thin films were characterized by XRD, SEM, and UV-Vis techniques. XRD results showed that the structure of the deposited thin films changed from amorphous phase for the films, which deposited at room temperature, to crystalline phase for the films, which deposited at high temperature. Optimum temperature to obtain a good crystalline structure was 525°C. The SEM image also showed that the crystallization of the thin films is increased with increasing of annealing temperature. Transmittance and reflectance spectral were used to calculate the absorption coefficient. Two absorption edges in two spectral regions were distinguished according to direct and indirect electron transitions. Energy band gap Eg was calculated by using the Tauc relationship for both direct and indirect electron transitions. The average value of Eg was equal to 0.79 eV and 0.61 eV for direct and indirect transitions, respectively.

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