Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy

2004 ◽  
Vol 95 (10) ◽  
pp. 5532-5539 ◽  
Author(s):  
Kenji Nomura ◽  
Hiromichi Ohta ◽  
Kazushige Ueda ◽  
Toshio Kamiya ◽  
Masahiro Orita ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Mechanism ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline

scholarly journals Complex Oxides: Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse (Adv. Mater. Interfaces 18/2019)

2019 ◽  
Vol 6 (18) ◽  
pp. 1970116
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Complex Oxides ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

2002 ◽  
Vol 747 ◽  
Author(s):  
K. Nomura ◽  
H. Ohta ◽  
K. Ueda ◽  
T. Kamiya ◽  
M. Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Defect Density ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Oxide Semiconductor ◽  
Single Crystalline ◽  
Transparent Oxide ◽  
Improved Performance ◽  
Transparent Oxide Semiconductors

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse

2019 ◽  
Vol 6 (18) ◽  
pp. 1901075 ◽  
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

1997 ◽  
Vol 485 ◽  
Author(s):  
Claudine M. Chen ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Crystal Growth ◽  
Incubation Time ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Grain Sizes ◽  
Random Nucleation ◽  
Nucleation Sites ◽  
Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

Photoelectron spectroscopy of thin-film Yb-Si(100) structures formed by solid phase epitaxy at 800 K

2004 ◽  
Vol 30 (9) ◽  
pp. 738-740
Author(s):  
D. V. Vyalikh ◽  
M. V. Kuzmin ◽  
M. A. Mittsev ◽  
S. L. Molodtsov
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

2006 ◽  
Vol 928 ◽  
Author(s):  
Andreas Fissel ◽  
Dirk Kuehne ◽  
Eberhard Bugiel ◽  
H. Joerg Osten
Keyword(s):  
Low Temperatures ◽  
Negative Differential Resistance ◽  
Molecular Beam ◽  
Solid Phase ◽  
Differential Resistance ◽  
Solid Phase Epitaxy ◽  
Double Barrier ◽  
Single Crystalline ◽  
Novel Approach ◽  
Sharp Interfaces

ABSTRACTDouble-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.

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