Reductive Solid Phase Epitaxy of Layered Y2O2Bi with Bi2– Square Net from (Y, Bi) Powders and Y2O3 Amorphous Thin Film

2014 ◽  
Vol 14 (9) ◽  
pp. 4227-4229 ◽  
Author(s):  
Ryosuke Sei ◽  
Tomoteru Fukumura ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Film ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Thin Film

Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

1997 ◽  
Vol 485 ◽  
Author(s):  
Claudine M. Chen ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Crystal Growth ◽  
Incubation Time ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Grain Sizes ◽  
Random Nucleation ◽  
Nucleation Sites ◽  
Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

Photoelectron spectroscopy of thin-film Yb-Si(100) structures formed by solid phase epitaxy at 800 K

2004 ◽  
Vol 30 (9) ◽  
pp. 738-740
Author(s):  
D. V. Vyalikh ◽  
M. V. Kuzmin ◽  
M. A. Mittsev ◽  
S. L. Molodtsov
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Solid Phase ◽  
Solid Phase Epitaxy

scholarly journals High electrical conduction of Sb square net in anti-ThCr2Si2 type La2O2Sb thin film grown by multilayer solid-phase epitaxy

2021 ◽  
Author(s):  
Yuki Yamamoto ◽  
Hideyuki Kawasoko ◽  
Tomoteru Fukumura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rare Earth ◽  
Electrical Conduction ◽  
Solid Phase ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy

Anti-ThCr2Si2 type RE2O2Sb (RE = rare earth) with Sb square net have shown insulating conduction so far. Here we report the synthesis of La2O2Sb epitaxial thin films for the first...

Influences of oxygen contamination on evaporated poly-Si thin-film solar cells by solid-phase epitaxy

2010 ◽  
Vol 518 (15) ◽  
pp. 4351-4355 ◽  
Author(s):  
Song He ◽  
Johnson Wong ◽  
Daniel Inn ◽  
Bram Hoex ◽  
Armin G. Aberle ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solid Phase ◽  
Thin Film Solar Cells ◽  
Solid Phase Epitaxy ◽  
Oxygen Contamination ◽  
Si Thin Film

Combinatorial Studies of Switching and Solid-Phase Crystallization in Amorphous Silicon

2005 ◽  
Vol 894 ◽  
Author(s):  
Paul Stradins ◽  
Howard M. Branz ◽  
Jian Hu ◽  
Scott Ward ◽  
Qi Wang
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Reverse Current ◽  
Solid Phase Epitaxy ◽  
Solid Phase Crystallization ◽  
Metallic Contacts ◽  
Image Monitoring ◽  
Kinetics Of

AbstractCombinatorial approaches are successfully applied for the optimization of electric write-once, thin-film Si antifuse memory devices, as well as for studying the solid-phase epitaxy kinetics of amorphous silicon on c-Si. High forward, low reverse current thin film Si diode deposition recipes are selected using cross-strips of different combinations of amorphous and microcrystalline doped layers, as well as a thickness-wedged intrinsic a-Si:H buffer layer. By studying switching in thickness-wedged a-Si:H layers, it is found that switching requires both a critical field and a critical bias voltage across the metallic contacts. Solid-phase epitaxy speed has a non-linear dependence on the film thickness, which is easily observed by optical image monitoring and analysis in wedged a-Si:H films on c-Si wafers.

Effect of Buried Surface Structure on Solid Phase Epitaxy of GE on SI (111)-7×7

1993 ◽  
Vol 317 ◽  
Author(s):  
Olof C. Hellman
Keyword(s):  
Thin Film ◽  
Surface Structure ◽  
Surface Reconstruction ◽  
Silicon Surface ◽  
Room Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Rich Phase ◽  
One Dimensional ◽  
Surface Steps

ABSTRACTWe study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.

Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy

2004 ◽  
Vol 95 (10) ◽  
pp. 5532-5539 ◽  
Author(s):  
Kenji Nomura ◽  
Hiromichi Ohta ◽  
Kazushige Ueda ◽  
Toshio Kamiya ◽  
Masahiro Orita ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Mechanism ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline
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