Evaporation and Deposition Rates, Sticking Probability, and Background Pressure during the Production of Thin Films in Vacuum

1966 ◽  
Vol 37 (12) ◽  
pp. 4341-4346 ◽  
Author(s):  
Helmut Schwarz
Keyword(s):  
Thin Films ◽  
Sticking Probability ◽  
Deposition Rates

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Impact of Deposition Rate on the Structural and Magnetic Properties of Sputtered Ni/Cu Multilayer Thin Films

2017 ◽  
Vol 73 (1) ◽  
pp. 85-90 ◽  
Author(s):  
Ali Karpuz ◽  
Salih Colmekci ◽  
Hakan Kockar ◽  
Hilal Kuru ◽  
Mehmet Uckun
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Deposition Rate ◽  
High Rate ◽  
Cubic Phase ◽  
High Deposition Rate ◽  
Multilayer Thin Films ◽  
Face Centered Cubic ◽  
Deposition Rates ◽  
Cu Films

AbstractThe structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, Ms, values were 90 and 138 emu/cm3 for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, Mr, values were also found to be 48 and 71 emu/cm3 for the low and high deposition rates, respectively. The coercivity, Hc, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the Hc values. The Ms, Mr, and Hc values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

The LPCVD of Silicon Nitride Films from Alkylazidosilanes

1990 ◽  
Vol 204 ◽  
Author(s):  
David A. Roberts ◽  
Arthur K. Hochberg ◽  
David L. O'Meara ◽  
Felicia Rusnak ◽  
Herman Hockenhull
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Film Properties ◽  
Deposition Rates ◽  
Extreme Caution ◽  
Silicon Nitride Films ◽  
Sensitive Film

ABSTRACTThe series of azidosilanes, SiEtn(N3)4-n where n = 1,2,3 and Si(t-butyl)(N3)3 were evaluated for the LPCVD of silicon nitride thin films. Both SiEt(N3)3 and Si(t-butyl)(N3)3 gave deposition rates of approximately 100 Å/min at temperatures of 450–500°C but films appear to be porous and air sensitive. Film properties improved as deposition temperatures were increased to 600°C. The polyazides must be handled with extreme caution. An unexplained detonation of one sample of SiEt(N3)3 occurred during the course of this study.

TEM of Pyrolytic Al2O3 and Ta-Al2O3 Thin Films on Silicon

1974 ◽  
Vol 32 ◽  
pp. 474-475
Author(s):  
R. M. Anderson
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Cross Sections ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deposition Rates ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
High Electrical Resistivity ◽  
Amorphous Structures

Pyrolytically deposited Al2O3, thin films are employed as dielectrics in metal-insulator-semiconductor structures used for insulated-gate field-effect transistors. Ideally, very thin Al2O3 films should have smooth surfaces, uniform cross-sections and high electrical resistivity. These requirements are best met by amorphous Al2O3, film microstructures. Pyrolysis of amorphous Al2O3 films must be undertaken at temperatures lower than 700°C with a concomitant low deposition rate. The incorporation of Ta in the Al2O3 yields amorphous structures at deposition tempera tures of about 800-900°C with substantially higher deposition rates.

Growth and Structure of Germanium Films Evaporated Onto Rock Salt

1970 ◽  
Vol 28 ◽  
pp. 512-513
Author(s):  
G. Shimaoka ◽  
S. C. Chang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Rock Salt ◽  
Electron Beam Irradiation ◽  
Substrate Surface ◽  
Beam Irradiation ◽  
Deposition Rates ◽  
Surface Conditions ◽  
Germanium Films

Recent studies of evaporated germanium films have demonstrated that their structure and epitaxy are greatly influenced by various evaporation parameters such as vacuum pressure, substrate surface conditions, and deposition rate as veil as substrate temperature. The purpose of this study is to investigate growth and structure of germanium thin films evaporated onto a clean rock-salt substrate in ultrahlgh vacuum and to find optimum epitaxial growth condition.High-purity (intrinsic) germanium was evaporated at various deposition rates, 0.1-5Å/sec, and thicknesses, 3O-5OOÅ, onto vacuum-cleaved and air-cleaved (001)NaCl substrates held at 25°-500°C in a vacuum of ∼10-8Torr. Some films were prepared under lateral electric field of dc 100V/cm or an electron-beam irradiation with ∼1015 electrons/cm2/sec, 300-400V, applied to the substrate during evaporation.

Surface morphology and microstructure of zirconia thin films prepared at different deposition rates

2004 ◽  
Author(s):  
Dongping Zhang ◽  
Jianda Shao ◽  
Meiqiong Zhan ◽  
Ming Fang ◽  
Jianbing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Deposition Rates
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