Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode

2004 ◽  
Vol 95 (12) ◽  
pp. 7925-7935 ◽  
Author(s):  
A. Reklaitis ◽  
L. Reggiani
Keyword(s):  
Monte Carlo ◽  
Transit Time ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Hot Carrier

Monte Carlo study of photogenerated carrier transport in GaAs surface space‐charge fields

1989 ◽  
Vol 66 (7) ◽  
pp. 3066-3073 ◽  
Author(s):  
Xing Zhou ◽  
Thomas Y. Hsiang ◽  
R. J. Dwayne Miller
Keyword(s):  
Monte Carlo ◽  
Space Charge ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Gaas Surface ◽  
Photogenerated Carrier

scholarly journals Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 127-130
Author(s):  
S. Babiker ◽  
A. Asenov ◽  
J. R. Barker ◽  
S. P. Beaumont
Keyword(s):  
Finite Element ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Particle Simulation ◽  
Research Centre ◽  
Design Work ◽  
Hot Carrier ◽  
Multiple Data ◽  
Device Geometry ◽  
Quadrilateral Finite Element

The complex recess and gate shape of modem compound FETs greatly affect the device parasitics and therefore impose the need for proper description of the device geometry and surface conditions in any practical device simulations. In this paper we describe a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. The module combines realistic quadrilateral finite-element description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in short recess gate compound FETs. A Single Programme Multiple Data (SPMD) parallel approach makes it possible to use our MC simulator for practical design work, generating the necessary I-V characteristics in parallel. The capabilities of the finite element MC module are illustrated in example simulations of a 200nm pseudomorphic HEMT fabricated in the Nanoelectronics Research Centre of Glasgow University.

Monte Carlo simulation of hot carrier transport in III-N LEDs

2015 ◽  
Vol 14 (2) ◽  
pp. 382-397 ◽  
Author(s):  
Pyry Kivisaari ◽  
Jani Oksanen ◽  
Jukka Tulkki ◽  
Toufik Sadi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carrier

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

2000 ◽  
Vol 338-342 ◽  
pp. 765-768 ◽  
Author(s):  
H.-E. Nilsson ◽  
E. Bellotti ◽  
K.F. Brennan ◽  
M. Hjelm
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Full Band

Monte Carlo Simulation of Boundary Scattering Effects for Power MOSFET Performance

2003 ◽  
Author(s):  
A. Marathe ◽  
D. G. Walker
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carriers ◽  
Power Mosfets ◽  
Hot Carrier ◽  
Microelectronic Devices ◽  
Interface Scattering ◽  
Scattering Effects ◽  
Hot Carrier Effects

Miniaturization of microelectronic devices has lead to many new issues not seen in larger structures, such as hot carrier effects and interfacial effects. In power MOSFETs, degradation of the transconductance can occur over the lifetime of a device. This decrease in performance is a result of hot carriers in the channel region scattering at a Si/SiO2 interface that has been passivated with hydrogen. Eventually hot carriers liberate the hydrogen, leaving silicon bonds with an entirely different scattering cross section. The current work presents a Monte Carlo simulation of carrier transport in silicon near an interface. Scattering parameters at the interface are parameterized and studied. It was found that electron mobility, which is proportional to transconductance, is a function of the energy loss rate and type of scattering at the interface. Results indicate that dangling bonds and H-Si bonds can be characterized by different scattering mechanisms.

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