Characterization of a compact filament-driven multicusp ion source for low energy time-of-flight Rutherford backscattering spectrometry application

2004 ◽  
Vol 75 (5) ◽  
pp. 1869-1871
Author(s):  
S. Dangtip ◽  
P. Junphong ◽  
V. Ano ◽  
B. Lekprasert ◽  
D. Suwannakachorn ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Time Of Flight ◽  
Ion Source ◽  
Rutherford Backscattering ◽  
Low Energy ◽  
Multicusp Ion Source

scholarly journals Characterization of liquid cluster ion source by the time-of-flight method

2006 ◽  
Vol 77 (3) ◽  
pp. 03B509 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hidetaka Noguchi ◽  
Kazuya Nakayama ◽  
Masakazu Kawashita
Keyword(s):  
Time Of Flight ◽  
Ion Source ◽  
Cluster Ion Source ◽  
Cluster Ion ◽  
Time Of Flight Method

Resolution improvement of ion projector with a low energy spread multicusp ion source

1999 ◽  
Vol 46 (1-4) ◽  
pp. 477-480 ◽  
Author(s):  
W.H. Bruenger ◽  
M. Torkler ◽  
K.N. Leung ◽  
Y. Lee ◽  
M.D. Williams ◽  
...  
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Energy Spread ◽  
Multicusp Ion Source ◽  
Resolution Improvement

Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

2008 ◽  
Vol 1066 ◽  
Author(s):  
Prakash R. Poudel ◽  
K. Hossain ◽  
J. Li ◽  
B. Gorman ◽  
A. Neogi ◽  
...  
Keyword(s):  
Light Emission ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Source ◽  
Alpha Particles ◽  
Low Energy ◽  
Negative Ion ◽  
Tandem Accelerator ◽  
Cross Sectional ◽  
Osmium Silicide

ABSTRACTLow energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

Characterization of amorphous silicon films by Rutherford backscattering spectrometry

1980 ◽  
Vol 168 (1-3) ◽  
pp. 211-215 ◽  
Author(s):  
K. Kubota ◽  
T. Imura ◽  
M. Iwami ◽  
A. Hiraki ◽  
M. Satou ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Silicon Films
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