scholarly journals GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

2004 ◽  
Vol 84 (13) ◽  
pp. 2253-2255 ◽  
Author(s):  
H. W. Choi ◽  
C. Liu ◽  
E. Gu ◽  
G. McConnell ◽  
J. M. Girkin ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Monolithically Integrated

GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

Nano Letters ◽  
2011 ◽  
Vol 11 (2) ◽  
pp. 385-390 ◽  
Author(s):  
Linus C. Chuang ◽  
Forrest G. Sedgwick ◽  
Roger Chen ◽  
Wai Son Ko ◽  
Michael Moewe ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Light Emitting Diode ◽  
Avalanche Photodiode ◽  
Light Emitting ◽  
Monolithically Integrated

Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire

2016 ◽  
Author(s):  
Renjie Wang ◽  
Yong-Ho Ra ◽  
Yuanpeng Wu ◽  
Songrui Zhao ◽  
Hieu P. T. Nguyen ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Monolithically Integrated ◽  
Full Color

scholarly journals Flexible and monolithically integrated multicolor light emitting diodes using morphology-controlled GaN microstructures grown on graphene films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Keundong Lee ◽  
Dongha Yoo ◽  
Hongseok Oh ◽  
Gyu-Chul Yi
Keyword(s):  
Mechanical Stability ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Time ◽  
Controlled Growth ◽  
Light Emitting ◽  
Cvd Graphene ◽  
Monolithically Integrated ◽  
Graphene Films ◽  
Led Arrays

AbstractWe report flexible and monolithically integrated multicolor light-emitting diode (LED) arrays using morphology-controlled growth of GaN microstructures on chemical-vapor-deposited (CVD) graphene films. As the morphology-controlled growth template of GaN microstructures, we used position-controlled ZnO nanostructure arrays with different spacings grown on graphene substrates. In particular, we investigated the effect of the growth parameters, including micropattern spacings and growth time and temperature, on the morphology of the GaN microstructures when they were coated on ZnO nanostructures on graphene substrates. By optimizing the growth parameters, both GaN microrods and micropyramids formed simultaneously on the graphene substrates. Subsequent depositions of InGaN/GaN quantum well and p-GaN layers and n- and p-type metallization yielded monolithic integration of microstructural LED arrays on the same substrate, which enabled multicolor emission depending on the shape of the microstructures. Furthermore, the CVD graphene substrates beneath the microstructure LEDs facilitated transfer of the LED arrays onto any foreign substrate. In this study, Cu foil was used for flexible LEDs. The flexible devices exhibited stable electroluminescence, even under severe bending conditions. Cyclic bending tests demonstrated the excellent mechanical stability and reliability of the devices.

scholarly journals High-speed III-V nanowire photodetector monolithically integrated on Si

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Svenja Mauthe ◽  
Yannick Baumgartner ◽  
Marilyne Sousa ◽  
Qian Ding ◽  
Marta D. Rossell ◽  
...  
Keyword(s):  
High Speed ◽  
Light Emitting Diode ◽  
Spectral Response ◽  
Optical Data ◽  
Fully Integrated ◽  
Light Emitting ◽  
Optical Links ◽  
Monolithically Integrated ◽  
Integrated Optical ◽  
Local Integration

Abstract Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

scholarly journals Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon

2014 ◽  
Vol 22 (S7) ◽  
pp. A1768 ◽  
Author(s):  
Renjie Wang ◽  
Hieu P. T. Nguyen ◽  
Ashfiqua T. Connie ◽  
J. Lee ◽  
Ishiang Shih ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Monolithically Integrated ◽  
Color Tunable

Analysis and Modeling of Thermal-Electric Coupling Effect of High-Power Monolithically Integrated Light-Emitting Diode

2018 ◽  
Vol 65 (2) ◽  
pp. 564-571 ◽  
Author(s):  
Yibin Zhang ◽  
Mingdi Ding ◽  
Desheng Zhao ◽  
Hongjuan Huang ◽  
Longjie Huang ◽  
...  
Keyword(s):  
High Power ◽  
Coupling Effect ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Monolithically Integrated ◽  
Electric Coupling

Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

2019 ◽  
Vol 28 (10) ◽  
pp. 107801 ◽  
Author(s):  
Yanxu Chen ◽  
Dongliang Xu ◽  
Kaikai Xu ◽  
Ning Zhang ◽  
Siyang Liu ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Optoelectronic Properties ◽  
Light Emitting ◽  
Monolithically Integrated ◽  
Cmos Ic
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